Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles

2002 ◽  
Vol 117 (5) ◽  
pp. 1931-1934 ◽  
Author(s):  
Yuniarto Widjaja ◽  
Charles B. Musgrave
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Detailed Reaction Mechanism

Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide

2019 ◽  
Vol 1 (5) ◽  
pp. 433-446 ◽  
Author(s):  
Annelies Delabie ◽  
Matty Caymax ◽  
Bert Brijs ◽  
David Brunco ◽  
Thierry Conard ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Growth Studies ◽  
Layer Deposition

scholarly journals Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39039-39046 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Daekwang Woo ◽  
Jong Myeong Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Deposition Cycle ◽  
Atomic Layer Deposition Cycle ◽  
First Principles Study ◽  
Layer Deposition ◽  
Dissociative Reactions

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.

Reaction Mechanism of Atomic Layer Deposition of Aluminum Sulfide using Trimethylaluminum and Hydrogen Sulfide

2021 ◽  
Author(s):  
Yanghong Yu ◽  
Zhongchao Zhou ◽  
Lina Xu ◽  
Yihong Ding ◽  
Guoyong Fang
Keyword(s):  
Hydrogen Sulfide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Sulfides ◽  
Layer Deposition

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3...

Reaction Mechanism of Pt Atomic Layer Deposition on Various Textile Surfaces

2019 ◽  
Vol 31 (21) ◽  
pp. 8995-9002
Author(s):  
Il-Kwon Oh ◽  
Jong Seo Park ◽  
Mohammad Rizwan Khan ◽  
Kangsik Kim ◽  
Zonghoon Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films

2016 ◽  
Vol 16 (5) ◽  
pp. 4924-4928 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Hana Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Antimony Telluride ◽  
Layer Deposition

Insights into the passivation effect of atomic layer deposited hafnium oxide for efficiency and stability enhancement in organic solar cells

2018 ◽  
Vol 6 (30) ◽  
pp. 8051-8059 ◽  
Author(s):  
Ermioni Polydorou ◽  
Martha Botzakaki ◽  
Charalampos Drivas ◽  
Kostas Seintis ◽  
Ilias Sakellis ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Organic Solar Cells ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Stability Enhancement

Atomic layer deposition of HfO2 significantly increases the efficiency and prolongs the lifetime of organic solar cells.

scholarly journals First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16584-16592
Author(s):  
Kyungtae Lee ◽  
Youngseon Shim
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Energy Diagram ◽  
First Principles Study ◽  
Layer Deposition

Energy diagram of reaction pathways for decomposition of different aminosilane precursors on a WO3 (001) surface.

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