Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well

2002 ◽  
Vol 81 (2) ◽  
pp. 346-348 ◽  
Author(s):  
V. Malyarchuk ◽  
J. W. Tomm ◽  
V. Talalaev ◽  
Ch. Lienau ◽  
F. Rinner ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Semiconductor Quantum Well ◽  
Recombination Velocity ◽  
And Diffusion

Cathodoluminescence Study of Diffusion Length and surface Recombination Velocity in III-V Multiple Quantum Well Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
L.-L. Chao ◽  
M. B. Freiler ◽  
M. Levy ◽  
J.-L. Lin ◽  
G. S. Cargill ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Multiple Quantum Well ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Side Walls ◽  
Recombination Velocity

AbstractWe describe studies of luminescence and lateral transport properties of excited carriers in GaAs- AIGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from ˜ 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Cathodoluminescence Study Of Diffusion Length And Surface Recombination Velocity In III-V Multiple Quantum Well Structures

1995 ◽  
Vol 406 ◽  
Author(s):  
L.- L. Chao ◽  
M. B. Freiler ◽  
M. Levy ◽  
J.-L. Lin ◽  
G. S. Cargill ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Multiple Quantum Well ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Side Walls ◽  
Recombination Velocity

AbstractWe describe studies of luminescence and lateral transport properties of excited carriers in GaAs- A1GaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from ˜ 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

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