Cathodoluminescence Study of Diffusion Length and surface Recombination Velocity in III-V Multiple Quantum Well Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
L.-L. Chao ◽  
M. B. Freiler ◽  
M. Levy ◽  
J.-L. Lin ◽  
G. S. Cargill ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Multiple Quantum Well ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Side Walls ◽  
Recombination Velocity

AbstractWe describe studies of luminescence and lateral transport properties of excited carriers in GaAs- AIGaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from ˜ 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

Cathodoluminescence Study Of Diffusion Length And Surface Recombination Velocity In III-V Multiple Quantum Well Structures

1995 ◽  
Vol 406 ◽  
Author(s):  
L.- L. Chao ◽  
M. B. Freiler ◽  
M. Levy ◽  
J.-L. Lin ◽  
G. S. Cargill ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diffusion Length ◽  
Multiple Quantum Well ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Luminescence Efficiency ◽  
Side Walls ◽  
Recombination Velocity

AbstractWe describe studies of luminescence and lateral transport properties of excited carriers in GaAs- A1GaAs multiple quantum well (MQW) structures by cathodoluminescence measurements in a scanning electron microscope. We examine the effect of in-plane, etch-defined feature size on MQW luminescence efficiency and variability, and determine the diffusion length and its temperature dependence from ˜ 8K to 250K. Our measurements also provide information about nonradiative surface recombination velocity at the side walls of etch-defined MQW structures.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Visible-wavelength laser action of ZnCdO∕(Zn,Mg)O multiple quantum well structures

2007 ◽  
Vol 91 (23) ◽  
pp. 231103 ◽  
Author(s):  
S. Sadofev ◽  
S. Kalusniak ◽  
J. Puls ◽  
P. Schäfer ◽  
S. Blumstengel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Action ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Visible Wavelength
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