Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

2002 ◽  
Vol 81 (2) ◽  
pp. 268-270 ◽  
Author(s):  
Max Shtein ◽  
Jonathan Mapel ◽  
Jay B. Benziger ◽  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Dielectric Surface ◽  
Film Morphology ◽  
Electrical Characteristics ◽  
Organic Vapor

scholarly journals Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectrics

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1146
Author(s):  
Yih-Shing Lee ◽  
Yu-Hsin Wang ◽  
Tsung-Cheng Tien ◽  
Tsung-Eong Hsieh ◽  
Chun-Hung Lai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Single Layer ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Electrical Stability ◽  
Bias Stress

In this work, two stacked gate dielectrics of Al2O3/tetraethyl-orthosilicate (TEOS) oxide were deposited by using the equivalent capacitance with 100-nm thick TEOS oxide on the patterned InGaZnO layers to evaluate the electrical characteristics and stability improvement of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) devices, including positive bias stress (PBS) and negative bias stress (NBS) tests. Three different kinds of gate dielectrics (Al2O3, TEOS, Al2O3/TEOS) were used to fabricate four types of devices, differing by the gate dielectric, as well as its thickness. As the Al2O3 thickness of Al2O3/TEOS oxide dielectric stacks increased, both the on-current and off-current decreased, and the transfer curves shifted to larger voltages. The lowest ∆Vth of 0.68 V and ∆S.S. of −0.03 V/decade from hysteresis characteristics indicate that the increase of interface traps and charge trapping between the IGZO channel and gate dielectrics is effectively inhibited by using two stacked dielectrics with 10-nm thick Al2O3 and 96-nm thick TEOS oxide. The lowest ∆Vth and ∆S.S. values of a-IGZO TFTs with 10-nm thick Al2O3 and 96-nm thick TEOS oxide gate dielectrics according to the PBS and NBS tests were shown to have the best electrical stability in comparison to those with the Al2O3 or TEOS oxide single-layer dielectrics.

scholarly journals Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors

2020 ◽  
Vol 7 (10) ◽  
pp. 1902145 ◽  
Author(s):  
Michael Geiger ◽  
Rachana Acharya ◽  
Eric Reutter ◽  
Thomas Ferschke ◽  
Ute Zschieschang ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bottom Gate

scholarly journals High mobility electron-conducting thin-film transistors by organic vapor phase deposition

2008 ◽  
Vol 93 (3) ◽  
pp. 033305 ◽  
Author(s):  
C. Rolin ◽  
K. Vasseur ◽  
S. Schols ◽  
M. Jouk ◽  
G. Duhoux ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition
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