Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface

2007 ◽  
Vol 91 (22) ◽  
pp. 222108 ◽  
Author(s):  
Jeong-Ho Park ◽  
Seok-Ju Kang ◽  
Jeong-Woo Park ◽  
Bogyu Lim ◽  
Dong-Yu Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Dielectric Surface ◽  
Field Effect Mobility

Spin-on Polymer Gate Dielectric for High Performance Organic Thin Film Transistors

1999 ◽  
Vol 558 ◽  
Author(s):  
C.D. Sheraw ◽  
D.J. Gundlach ◽  
T.N. Jackson
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Parylene C ◽  
Polymeric Dielectrics

ABSTRACTWe have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

Flexible Pentacene/PMMA Thin-Film Transistors Fabricated on Aluminium Foil Substrates

2005 ◽  
Vol 871 ◽  
Author(s):  
J. Puigdollers ◽  
C. Voz ◽  
M. Fonrodona ◽  
I. Martín ◽  
A. Orpella ◽  
...  
Keyword(s):  
Thin Film ◽  
Polymethyl Methacrylate ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
High Vacuum ◽  
Aluminum Substrate ◽  
Field Effect Mobility ◽  
Inverted Structure ◽  
Substrate Temperatures

AbstractPentacene thin-film transistors (TFT) were fabricated on aluminum foils using polymethyl methacrylate (PMMA) as gate dielectric. In such structure, the aluminum substrate acts as the gate electrode itself. A bottom gate inverted structure was used to study the influence of the dielectric and the aluminum substrate on the device performance.Pentacene thin-films were deposited by thermal evaporation in high-vacuum at deposition rates around 3 Ås-1 and three different substrate temperatures (30, 60 and 90°C). The maximum process temperature achieved was 170°C, corresponding to the baking of polymethyl methacrylate. The TFTs exhibit field-effect mobility values of ∼ 10-3 cm2V-1s-1 and threshold voltage values around –15 V. The influence of the dielectric and the substrate temperature on the pentacene structure and device field-effect mobility is discussed.

Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates

2015 ◽  
Vol 15 (10) ◽  
pp. 7513-7517 ◽  
Author(s):  
Soon-Won Jung ◽  
Jae Bon Koo ◽  
Chan Woo Park ◽  
Bock Soon Na ◽  
Ji-Young Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Bending Radius ◽  
Voltage Swing

In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2×10−3 cm2 V−1 s−1, and a 10−11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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