N2–H2 remote plasma nitridation for GaAs surface passivation

2002 ◽  
Vol 81 (1) ◽  
pp. 16-18 ◽  
Author(s):  
Maria Losurdo ◽  
P. Capezzuto ◽  
G. Bruno ◽  
G. Perna ◽  
V. Capozzi
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Remote Plasma ◽  
Plasma Nitridation

GaAs Surface Passivation for Device Applications.

1981 ◽  
Author(s):  
R. W. Grant ◽  
K. R. Elliott ◽  
S. P. Kowalczyk ◽  
D. L. Miller ◽  
J. R. Waldrop
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Device Applications

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

2001 ◽  
Vol 78 (24) ◽  
pp. 3875-3877 ◽  
Author(s):  
H. N. Al-Shareef ◽  
A. Karamcheti ◽  
T. Y. Luo ◽  
G. Bersuker ◽  
G. A. Brown ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Device Performance ◽  
Remote Plasma ◽  
Plasma Nitridation

He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

2001 ◽  
Vol 37 (12) ◽  
pp. 788 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Chien-Hao Chen ◽  
Chih-Wei Yang ◽  
Mo-Chiun Yu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Technology Applications ◽  
Submicron Cmos ◽  
Thin Gate Oxide

scholarly journals GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2915-2920
Author(s):  
Pawan Tyagi
Keyword(s):  
Surface Passivation ◽  
Single Step ◽  
Gaas Surface ◽  
Surface Recombination Velocity ◽  
Double Step ◽  
Fluoride Ions ◽  
Rutherford Back Scattering ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Sulfide Ions

ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

2010 ◽  
Vol 257 (4) ◽  
pp. 1347-1350 ◽  
Author(s):  
K.-S. Park ◽  
K.-H. Baek ◽  
D.P. Kim ◽  
J.-C. Woo ◽  
L.-M. Do ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Remote Plasma ◽  
Plasma Nitridation
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