Detection and electrical characterization of hidden layers using time-domain analysis of terahertz reflections

2002 ◽  
Vol 92 (1) ◽  
pp. 203-206 ◽  
Author(s):  
I. Geltner ◽  
D. Hashimshony ◽  
A. Zigler
1999 ◽  
Vol 592 ◽  
Author(s):  
J.L. Autran ◽  
P. Masson ◽  
G. Ghibaudo

ABSTRACTThis work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.


2014 ◽  
Vol 22 (22) ◽  
pp. 26510 ◽  
Author(s):  
Yongkang Dong ◽  
Pengbai Xu ◽  
Hongying Zhang ◽  
Zhiwei Lu ◽  
Liang Chen ◽  
...  

1993 ◽  
Vol 3 (3) ◽  
pp. 581-591 ◽  
Author(s):  
Wojciech Gwarek ◽  
Malgorzata Celuch-Marcysiak

2017 ◽  
Vol 109 (6) ◽  
pp. 3307-3317
Author(s):  
Afshin Hatami ◽  
Rakesh Pathak ◽  
Shri Bhide

Sign in / Sign up

Export Citation Format

Share Document