Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility

2002 ◽  
Vol 80 (22) ◽  
pp. 4160-4162 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
A. Godoy
Keyword(s):  
Layer Thickness ◽  
Electron Mobility ◽  
Strained Si

The role of powder layer thickness on the quality of SLM printed parts

2018 ◽  
Vol 18 (3) ◽  
pp. 948-955 ◽  
Author(s):  
Q.B. Nguyen ◽  
D.N. Luu ◽  
S.M.L. Nai ◽  
Z. Zhu ◽  
Z. Chen ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Powder Layer

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Layer Thickness ◽  
Shape Anisotropy ◽  
Tunneling Junction ◽  
Free Layer ◽  
Magnetic Field Sensors ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Bandstructure Near Misfit Dislocations in Si Quantum Wells

1998 ◽  
Vol 4 (S2) ◽  
pp. 794-795
Author(s):  
P.E. Batson
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Electron Mobility ◽  
Axial Strain ◽  
Strain Relaxation ◽  
Local Potential ◽  
Misfit Dislocations ◽  
High Electron ◽  
Strained Si ◽  
Growth Interface

High electron mobility structures have been built for several years now using strained silicon layers grown on SixGe(1-x) with x in the 25-40% range. In these structures, a thin layer of silicon is grown between layers of unstrained GeSi alloy. Matching of the two lattices in the plane of growth produces a bi-axial strain in the silicon, splitting the conduction band and providing light electron levels for enhanced mobility. If the silicon channel becomes too thick, strain relaxation can occur by injection of misfit dislocations at the growth interface between the silicon and GeSi alloy. The strain field of these dislocations then gives rise to a local potential variation that limits electron mobility in the strained Si channel. This study seeks to verify this mechanism by measuring the absolute conduction band shifts which track the local potential near the misfit dislocations.

Role of microstructure and layer thickness in porous silicon conductometric gas sensors

2005 ◽  
Vol 202 (8) ◽  
pp. 1467-1471 ◽  
Author(s):  
Z. Gaburro ◽  
C. J. Oton ◽  
M. Ghulinyan ◽  
L. Pancheri ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Layer Thickness ◽  
Gas Sensors

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

2007 ◽  
Vol 37 (5) ◽  
pp. 550-553 ◽  
Author(s):  
B.S. Kang ◽  
H.T. Wang ◽  
F. Ren ◽  
M. Hlad ◽  
B.P. Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Ph Sensors ◽  
High Electron Mobility
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