High drain current density and reduced gate leakage current in channel-doped AlGaN∕GaN heterostructure field-effect transistors with Al2O3∕Si3N4 gate insulator

2005 ◽  
Vol 87 (7) ◽  
pp. 073504 ◽  
Author(s):  
Narihiko Maeda ◽  
Chengxin Wang ◽  
Takatomo Enoki ◽  
Toshiki Makimoto ◽  
Takehiko Tawara
Keyword(s):  
Leakage Current ◽  
Current Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Gate Insulator ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Enhanced CAD model for gate leakage current in heterostructure field effect transistors

1996 ◽  
Vol 43 (6) ◽  
pp. 845-851 ◽  
Author(s):  
Kie Young Lee ◽  
B. Lund ◽  
T. Ytterdal ◽  
P. Robertson ◽  
E.J. Martinez ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cad Model ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors

ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER

2010 ◽  
Vol 09 (04) ◽  
pp. 263-267
Author(s):  
A. Sh. HUSSEIN ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
S. M. THAHAB
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Carrier Confinement ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Good Agreement ◽  
Mg Doped

AlGaN/GaN -based heterostructure field-effect transistors (HFETs) with and without Mg -doped semi-insulating carrier confinement layer were simulated by using ISE TCAD software, respectively. The detailed study on the electrical properties of these samples was performed. The effect of inserting Mg -doped GaN layer on the source–drain (S–D) leakage current was investigated. Higher values of drain current and extrinsic transconductance were achieved with conventional HFETs (without Mg -doped). The source-to-drain (S–D) leakage current of conventional HFETs was also higher. However, the S–D leakage current was reduced with the insertion of the Mg -doped semi-insulating carrier confinement layer. Our results are in good agreement with the experimental results obtained by other researchers.

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

2012 ◽  
Vol 52 (7) ◽  
pp. 1323-1327 ◽  
Author(s):  
J. Kováč ◽  
A. Šatka ◽  
A. Chvála ◽  
D. Donoval ◽  
P. Kordoš ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Heterostructure Field Effect Transistors
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