Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 91 (10) ◽  
pp. 6695 ◽  
Author(s):  
H. S. Yang ◽  
C. Iwamoto ◽  
T. Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Inductively Coupled

Investigation on the Surface Passivation of Intrinsic a-Si:H Thin Films Prepared by Inductively Coupled Plasma-Chemical Vapor Deposition for Heterojunction Solar Cell Applications

2008 ◽  
Vol 8 (9) ◽  
pp. 4662-4665 ◽  
Author(s):  
Chaehwan Jeong ◽  
Minsung Jeon ◽  
Tae-Won Kim ◽  
Seongjae Boo ◽  
Koichi Kamisako
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled

Intrinsic a-Si:H thin films, which can have passivation functions on the surface of crystalline Si, were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD). The properties of the films were investigated at deposition temperatures ranging from 50 to 400 °C. The Si—H stretching mode at 2000 cm−1, which indicates good film quality, was found in the range of 150∼400 °C, but the film quality was not good at deposition temperatures below 150 °C. The passviation quality was determined by measuring the effective carrier lifetime using the quasi-steady state photoconductance (QSS-PC) technique. Two, 5, 7.5 and 10 nm thick films were deposited at 150 °C and annealed at 200 °C for 1 hour. The carrier lifetime of these films was approximately 3 times higher than that observed before annealing. A p a-SiC:H/i a-Si:H/n c-Si hetero-structure solar cell with a 7.8% efficiency and approximately 85% quantum efficiency (QE) was obtained by inserting an intrinsic a-Si:H thin film (5 nm) between the interfaces. These results highlight the potential applications of a passivation layer to heterojunction solar cells.

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