Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis

2002 ◽  
Vol 91 (10) ◽  
pp. 6388 ◽  
Author(s):  
Y. Zhang ◽  
W. J. Weber ◽  
W. Jiang ◽  
A. Hallén ◽  
G. Possnert
Keyword(s):  
Nuclear Reaction ◽  
Damage Evolution ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Nuclear Reaction Analysis

Experimental Simulation of Contamination Arising From Electro Rocket Engine-Jet on Surface of Spacecraft Units

1999 ◽  
Vol 591 ◽  
Author(s):  
A. Chirov ◽  
A. Nadiradze ◽  
V. Shaposhniko ◽  
V. Egorov
Keyword(s):  
Angular Distribution ◽  
Nuclear Reaction ◽  
Rocket Engine ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Experimental Simulation ◽  
Nuclear Reaction Analysis ◽  
Space Craft ◽  
Film Composition ◽  
Preliminary Estimation

ABSTRACTUnder conditions of a vacuum simulation it was investigated how electric rocket thruster (ERT) SPT-70 contaminates space craft (SC) surfaces. The contamination content in the ERT jet was studied by using solid targets. The film composition was analysed by Rutherford backscattering spectroscopy (RBS) He+ ions and nuclear reaction analysis (NRA) with H+ ions methods. Using the results of this analysis a preliminary estimation of the composition and the angular distribution of contaminated components in the ERT jet were carried out.

Luminescent Porous Silicon Investigated by accelerator analytics

1992 ◽  
Vol 281 ◽  
Author(s):  
Peter Steiner ◽  
Jens Weidhaas ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Nuclear Reaction ◽  
Oxygen Content ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Nuclear Reaction Analysis ◽  
Nanoporous Silicon

ABSTRACTElectroluminescent nanoporous silicon is investigated by accelerator techniques. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) are used to measure the oxygen content. The stoichiometry is Si1O1.8 in the top layer and Si1O0.8 in 6 μm depth. Channeling experiments show that only very weak channels are present.

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