Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

2002 ◽  
Vol 80 (10) ◽  
pp. 1800-1802 ◽  
Author(s):  
E. Anulekha Manjari ◽  
A. Subrahmanyam ◽  
N. DasGupta ◽  
A. DasGupta
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

scholarly journals Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6212-6215 ◽  
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Juan Barbolla ◽  
Estefanía Redondo ◽  
Ignacio Mártil ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Low Nitrogen

Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

2004 ◽  
Vol 457-460 ◽  
pp. 845-848 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Dominique Tournier ◽  
Josep Montserrat ◽  
Narcis Mestres ◽  
F. Sandiumenge ◽  
...  
Keyword(s):  
Dielectric Film ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

2001 ◽  
Vol 699 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
I. Mártil ◽  
G. González-Díaz
Keyword(s):  
Three Dimensional ◽  
Electrical Characterization ◽  
Quantitative Information ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gap States ◽  
First Time ◽  
Transient Measurements ◽  
Mis Structures

AbstractAs it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the DIGS spatial and energetical distribution obtained by recording conductance transients at several temperatures (ranging from 77 to 300 K) and several frequencies (ranging from 100 Hz to 200 KHz). These measurements allow us to obtain three-dimensional defect maps of Al/SiNx:H/InP structures browsing ranges of 0.5 eV in energy and 40 Å in depth. Our results show that this technique is a very useful tool for the electrical characterization of MIS structures and reveals itself as very valuable in the III-V semiconductor-field-effect transistor scenario.

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