Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide

2002 ◽  
Vol 91 (5) ◽  
pp. 2910-2915 ◽  
Author(s):  
Xiang-Zheng Bo ◽  
Nan Yao ◽  
Sean R. Shieh ◽  
Thomas S. Duffy ◽  
J. C. Sturm
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Defect Density ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Polycrystalline Silicon Films

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

scholarly journals Low Temperature Growth of Polycrystalline Silicon Films by RF Sputtering Method(1st Report).

1995 ◽  
Vol 61 (6) ◽  
pp. 829-833
Author(s):  
Hiroaki KAKIUCHI ◽  
Hideaki KAWABE ◽  
Kumayasu YOSHII ◽  
Kiyoshi YASUTAKE ◽  
Akihiro TAKEUCHI ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Rf Sputtering ◽  
Silicon Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Films
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