Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ion-beam-damaged diamond films

2002 ◽  
Vol 91 (4) ◽  
pp. 2481-2486 ◽  
Author(s):  
A. Laikhtman ◽  
A. Hoffman
Keyword(s):  
Plasma Treatment ◽  
Electron Emission ◽  
Secondary Electron ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
Secondary Electron Emission ◽  
Diamond Films

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

Secondary Electron Emission from Boron Doped Diamond Films Grown by MPCVD

2013 ◽  
Vol 28 (5) ◽  
pp. 688-692
Author(s):  
丁明清 DING Ming-qing ◽  
李莉莉 LI Li-li ◽  
冯进军 FENG Jin-jun
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Secondary electron emission properties of double-layer B-doped diamond films

2020 ◽  
Vol 106 ◽  
pp. 107826 ◽  
Author(s):  
Kongting Wei ◽  
Ruozheng Wang ◽  
Jie Li ◽  
Biye Liu ◽  
Qiang Wei ◽  
...  
Keyword(s):  
Double Layer ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Emission Properties

Effect of Annealing and Microwave Hydrogen Plasma Treatment on Structural, Chemical, and Electronic Properties of Ion Irradiated Diamond Films

2000 ◽  
Vol 650 ◽  
Author(s):  
Alexander Laikhtman ◽  
Alon Hoffman
Keyword(s):  
Plasma Treatment ◽  
Electron Affinity ◽  
Electron Emission ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Ion Bombardment ◽  
Near Surface ◽  
Diamond Surfaces ◽  
X Ray ◽  
Emission Properties

ABSTRACTIn the present study we correlate between the secondary electron emission (SEE) of variously treated Xe+ ion-damaged diamond films and their bonding structure in the near-surface region as identified by near edge X-ray absorption fine structure (NEXAFS) spectroscopy and X-ray photoelectron spectroscopy. The 50 keV Xe+ ion bombardment of hydrogenated polycrystalline diamond films to a dose of 2×1015 cm−2 results in the transformation of near-surface diamond to sp2-bonded amorphous carbon, increased oxygen adsorption, shift of the electron affinity from negative to positive, and strong degradation of its electron emission properties, although it does not induce a pronounced depletion of hydrogen. Exposure of the ion-bombarded films to microwave (MW) hydrogen plasma treatment for 30 min produces negative electron affinity diamond surfaces, but only partially regenerates SEE properties, retains some imperfection in the near-surface atomic layers, as determined by NEXAFS, and the concentration of oxygen remains relatively high. Subsequent annealing to 610 °C produces oxygen-free diamond films and somewhat increases their SEE. Annealing to 1000 °C results in desorption of the surface hydrogen, formation of a positive electron affinity surfaces and drastically degrades their electron emission properties. Prolonged, up to three hours MW hydrogen plasma treatment of as-implanted diamond films gradually improves the crystal quality and results in further increase of SEE intensity. This treatment does not, however, substantially reduce the concentration of oxygen in the previously damaged diamond, indicating its bulk diffusion during or after ion bombardment. To fully recover electron emission properties it is necessary to both remove the defects and hydrogenate the diamond surfaces.

scholarly journals Measurement of the secondary electron emission from CVD diamond films using phosphor screen detectors

2015 ◽  
Vol 10 (03) ◽  
pp. P03004-P03004 ◽  
Author(s):  
R. Vaz ◽  
P.W. May ◽  
N.A. Fox ◽  
C.J. Harwood ◽  
V. Chatterjee ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Phosphor Screen
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