Thermal stability of exchange coupling in permalloy/FeMn bilayers and its dependence on the antiferromagnetic layer thickness

2002 ◽  
Vol 91 (4) ◽  
pp. 2243-2246 ◽  
Author(s):  
H. Y. Li ◽  
L. Y. Chen ◽  
S. M. Zhou
1995 ◽  
Vol 384 ◽  
Author(s):  
R. D. Mcmichael ◽  
W. F. Egelhoff ◽  
Minh Ha

ABSTRACTIn order to improve the thermal stability of magnetic multilayer “spin valve” structures, we have measured the magnetic and magnetoresistive properties of a number of samples with the general structure of NiO/Co/Cu/Co/Cu/Co/NiO as a function of annealing time at 250 °C. The magnetoresistance (MR) of the samples annealed in air decreases proportionally to the square root of the annealing time. For samples annealed in a vacuum, the decrease in magnetoresistance is reduced, but not eliminated. Magnetometry of a vacuum annealed NiO/Co/NiO sample shows a magnetization reduction and a coercivity increase which suggest oxidation of the NiO-biased “outer” Co layers of the spin valve structure. For increasing NiObiased Co layer thickness, we show enhanced thermal stability and even increasing MR with annealing time for samples with the thickest outer Co layers.


2002 ◽  
Vol 38 (5) ◽  
pp. 2764-2766 ◽  
Author(s):  
J.Y. Hwang ◽  
M.Y. Kim ◽  
J.R. Rhee ◽  
S.S. Lee ◽  
D.G. Hwang ◽  
...  

1998 ◽  
Vol 22 (4_2) ◽  
pp. 489-492 ◽  
Author(s):  
H. Hoshiya ◽  
K. Meguro ◽  
Y. Hamakawa ◽  
R. Nakatani ◽  
H. Fukui

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.


2001 ◽  
Vol 89 (11) ◽  
pp. 7622-7624 ◽  
Author(s):  
Mutsuko Jimbo ◽  
Shingo Yokochi ◽  
Koji Yamagishi ◽  
Junichi Kurita

Sign in / Sign up

Export Citation Format

Share Document