Modeling and analysis of the electron cyclotron resonance diamond-like carbon deposition process

2002 ◽  
Vol 91 (3) ◽  
pp. 1634-1639 ◽  
Author(s):  
S. F. Yoon ◽  
K. H. Tan ◽  
Rusli ◽  
J. Ahn
Keyword(s):  
Cyclotron Resonance ◽  
Carbon Deposition ◽  
Electron Cyclotron Resonance ◽  
Deposition Process ◽  
Electron Cyclotron ◽  
Diamond Like Carbon ◽  
Modeling And Analysis

In-Situ Ellipsometric Monitoring of the Electron Cyclotron Resonance Etching of Diamond-Like Carbon

1994 ◽  
Vol 349 ◽  
Author(s):  
N.J. Ianno ◽  
S. Ahmer ◽  
S. Pittal ◽  
John A. Woollam
Keyword(s):  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Carbon Films ◽  
Electron Cyclotron ◽  
Diamond Like Carbon ◽  
Strong Function ◽  
Dc Bias ◽  
Input Variables

ABSTRACTThe electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

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