Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide

2001 ◽  
Vol 79 (27) ◽  
pp. 4568-4570 ◽  
Author(s):  
Hak-Seung Han ◽  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Optical Gain ◽  
Erbium Doped ◽  
Doped Silicon

Prospects of Laser Operation in Erbium Doped Silicon

2003 ◽  
Vol 770 ◽  
Author(s):  
M. Q. Huda ◽  
S. I. Ali
Keyword(s):  
Optical Gain ◽  
Optical Power ◽  
Laser Cavity ◽  
Threshold Value ◽  
Linear Increase ◽  
Laser Operation ◽  
Electron Hole ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Recombination Centers

AbstractProspects of laser operation in erbium doped silicon has been analyzed by a Shockley-Read-Hall (SRH) model. Erbium atoms have been considered to be introducing strong recombination centers in the silicon lattice. Electron-hole recombination at these sites were considered to be the source of erbium excitation. A two level system was considered for calculation of optical gain and the laser threshold. For a laser cavity of 300 μm with mirror reflectivities of 90%, and an optimistic absorption coefficient of 5 cm-1, a population inversion of 1.4×1018/cm3 was estimated as the threshold value. Achievement of the lasing condition was found feasible, but only for certain conditions of erbium activation. Effects of nonradiative deexcitation routes have been analyzed. On the assumption of 1019/cm3 of active erbium sites, linear increase of optical power in the laser cavity has been estimated for injected carrier densities above 1018/cm3.

Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier

2002 ◽  
Vol 81 (20) ◽  
pp. 3720-3722 ◽  
Author(s):  
Hak-Seung Han ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
Namkyoo Park
Keyword(s):  
Silicon Oxide ◽  
Optical Gain ◽  
Erbium Doped ◽  
Doped Silicon

Evaluation of erbium‐doped silicon for optoelectronic applications

1991 ◽  
Vol 70 (6) ◽  
pp. 3223-3228 ◽  
Author(s):  
Y. H. Xie ◽  
E. A. Fitzgerald ◽  
Y. J. Mii
Keyword(s):  
Erbium Doped ◽  
Doped Silicon ◽  
Optoelectronic Applications

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Stimulated emission in erbium-doped silicon structures under optical pumping

2001 ◽  
Vol 81 (1-3) ◽  
pp. 52-55 ◽  
Author(s):  
M.S. Bresler ◽  
O.B. Gusev ◽  
E.I. Terukov ◽  
I.N. Yassievich ◽  
B.P. Zakharchenya ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Stimulated Emission ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Silicon Structures

Visible and Infrared Electroluminescence Property of Erbium Doped Silicon-rich SiO2MOS-LED

2011 ◽  
Vol 32 (8) ◽  
pp. 749-754
Author(s):  
刘海旭 LIU Hai-xu ◽  
孙甲明 SUN Jia-ming ◽  
孟凡杰 MENG Fan-jie ◽  
侯琼琼 HOU Qiong-qiong
Keyword(s):  
Erbium Doped ◽  
Doped Silicon ◽  
Electroluminescence Property
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