Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy

2001 ◽  
Vol 90 (12) ◽  
pp. 5915-5923 ◽  
Author(s):  
Matthew C. Beard ◽  
Gordon M. Turner ◽  
Charles A. Schmuttenmaer
Keyword(s):  
Low Temperature ◽  
Terahertz Spectroscopy ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Low Temperature Grown Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Ultrafast carrier dynamics inBr+-bombarded InP studied by time-resolved terahertz spectroscopy

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
H. Němec ◽  
L. Fekete ◽  
F. Kadlec ◽  
P. Kužel ◽  
M. Martin ◽  
...  
Keyword(s):  
Terahertz Spectroscopy ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

scholarly journals Time-Resolved Terahertz Spectroscopy of Condensed Phase Reactions

1999 ◽  
Vol 19 (1-4) ◽  
pp. 145-148
Author(s):  
Richard McElroy ◽  
Klaas Wynne
Keyword(s):  
Terahertz Spectroscopy ◽  
Low Frequency ◽  
Electronic States ◽  
Carrier Dynamics ◽  
Solvation Dynamics ◽  
Vibrational Modes ◽  
Time Resolved ◽  
Condensed Phase Reactions ◽  
Probe Spectroscopy ◽  
First Time

Ultrafast time-resolved visible-pump, far-IR (THz) probe spectroscopy has been developed in our lab and has been applied to study carrier dynamics in photoexcited GaAs and dipole solvation dynamics in betaine and p-nitroaniline. This type of spectroscopy enables us to study for the first time the nonequilibrium interaction between excited electronic states and low frequency vibrational modes.

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