Transient reflectivity as a probe of ultrafast carrier dynamics in semiconductors: A revised model for low-temperature grown GaAs

2014 ◽  
Vol 116 (7) ◽  
pp. 073506 ◽  
Author(s):  
Nathan P. Wells ◽  
Paul M. Belden ◽  
Joseph R. Demers ◽  
William T. Lotshaw
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

Pump and Probe Terahertz Generation Study of Ultrafast Carrier Dynamics in Low-Temperature Grown-GaAs

2002 ◽  
Vol 41 (Part 2, No. 6B) ◽  
pp. L706-L709 ◽  
Author(s):  
Masayoshi Tonouchi ◽  
Naohiro Kawasaki ◽  
Takahiro Yoshimura ◽  
Hagen Wald ◽  
Paul Seidel
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Pump And Probe ◽  
Ultrafast Carrier ◽  
Low Temperature Grown Gaas

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

2003 ◽  
Vol 93 ◽  
pp. 367-374
Author(s):  
N. Kawasaki ◽  
Takeshi Yoshimura ◽  
Masayoshi Tonouchi ◽  
M. Tani ◽  
Kazufumi Sakai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Low Temperature Gaas

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Electrochemical Evaluation of Dopant Energetics and the Modulation of Ultrafast Carrier Dynamics in Cu-Doped CdSe Nanocrystals

2017 ◽  
Vol 121 (48) ◽  
pp. 27233-27240 ◽  
Author(s):  
Sourav Maiti ◽  
Jayanta Dana ◽  
Yogesh Jadhav ◽  
Tushar Debnath ◽  
Santosh K. Haram ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Cdse Nanocrystals ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Electrochemical Evaluation

Ultrafast Carrier Dynamics in (Bi1-xInx)2Se3 Thin Films: From Topological to Band Insulator

2021 ◽  
Author(s):  
Kateryna Kushnir ◽  
Teng Shi ◽  
Zhengtianye Wang ◽  
Stephanie Law ◽  
Lyubov Titova
Keyword(s):  
Thin Films ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Band Insulator
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