Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain terahertz spectroscopy

2002 ◽  
Vol 65 (12) ◽  
Author(s):  
Gregor Segschneider ◽  
Frank Jacob ◽  
Torsten Löffler ◽  
Hartmut G. Roskos ◽  
Sönke Tautz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
High Excitation ◽  
Time Domain Terahertz Spectroscopy ◽  
Low Temperature Grown Gaas

Time-domain terahertz spectroscopy and applications on drugs and explosives

2007 ◽  
Author(s):  
W. H. Fan ◽  
W. Zhao ◽  
G. H. Cheng ◽  
A. D. Burnett ◽  
P. C. Upadhya ◽  
...  
Keyword(s):  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Time Domain Terahertz Spectroscopy

scholarly journals Time-domain terahertz spectroscopy of (100) MgO and (100) LaAlO3 substrates

2004 ◽  
Vol 53 (6) ◽  
pp. 1772
Author(s):  
Hu Ying ◽  
Zhang Cun-Lin ◽  
Shen Jing-Ling ◽  
X. C. Zhang
Keyword(s):  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Time Domain Terahertz Spectroscopy

Paper Parameter Estimation Using Time-Domain Terahertz Spectroscopy

2012 ◽  
Author(s):  
Payam Mousavi ◽  
Ian R. Bushfield ◽  
Stéphane Savard ◽  
Frank Haran ◽  
J. Steven Dodge
Keyword(s):  
Parameter Estimation ◽  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Time Domain Terahertz Spectroscopy

Time-Domain Terahertz Spectroscopy and Sensing

2001 ◽  
pp. 315-328 ◽  
Author(s):  
P. Haring Bolivar ◽  
M. Brucherseifer ◽  
M. Nagel ◽  
H. P. M. Pellemans ◽  
H. Kurz
Keyword(s):  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Time Domain Terahertz Spectroscopy

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

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