Calculation of impact ionization coefficients with a third‐order Legendre polynomial expansion of the distribution function

1992 ◽  
Vol 71 (4) ◽  
pp. 1815-1822 ◽  
Author(s):  
Shiuh‐Luen Wang ◽  
Neil Goldsman ◽  
Kenneth Hennacy
Keyword(s):  
Distribution Function ◽  
Legendre Polynomial ◽  
Impact Ionization ◽  
Polynomial Expansion ◽  
Third Order ◽  
Ionization Coefficients

scholarly journals Impact Ionization Coefficients in (AlₓGa₁₋ₓ)0.52In0.48P and AlₓGa₁₋ₓAs Lattice-Matched to GaAs

2021 ◽  
pp. 1-6
Author(s):  
Harry I. J. Lewis ◽  
Liang Qiao ◽  
Jeng Shiuh Cheong ◽  
Aina N. A. P. Baharuddin ◽  
Andrey B. Krysa ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients ◽  
Lattice Matched

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

scholarly journals Impact ionization coefficients in Si1−xGex

1995 ◽  
Vol 66 (2) ◽  
pp. 204-205 ◽  
Author(s):  
J. Lee ◽  
A. L. Gutierrez‐Aitken ◽  
S. H. Li ◽  
P. K. Bhattacharya
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficients

Dispersion and gain investigation of free electron laser based on Legendre polynomial expansion

2005 ◽  
Author(s):  
Mohammad Hadi Eghlidi ◽  
Maysamreza Chamanzar ◽  
Khashayar Mehrany ◽  
Bizhan Rashidian ◽  
Mehdi Ranjbaran
Keyword(s):  
Legendre Polynomial ◽  
Free Electron ◽  
Free Electron Laser ◽  
Polynomial Expansion
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