Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (17) ◽  
pp. 2767-2769 ◽  
Author(s):  
Shin-ichi Karimoto ◽  
Kenji Ueda ◽  
Michio Naito ◽  
Tadayuki Imai
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Superconducting Thin Films ◽  
Single Crystalline ◽  
Infinite Layer

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Atomic layer by atomic layer growth of DyBaCuO superconducting thin films by molecular beam epitaxy

1990 ◽  
Vol 57 (8) ◽  
pp. 819-821 ◽  
Author(s):  
A. Schuhl ◽  
R. Cabanel ◽  
S. Lequien ◽  
B. Ghyselen ◽  
S. Tyč ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth ◽  
Superconducting Thin Films

scholarly journals Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

2015 ◽  
Vol 06 (09) ◽  
pp. 1289-1297
Author(s):  
Yuichi Sato ◽  
Shota Ishizaki ◽  
Yoshifumi Murakami ◽  
Mohamad Idham ◽  
Nur Ain ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Group Iii ◽  
Group Iii Nitride
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