Electron temperature analysis of two-gas-species inductively coupled plasma

2001 ◽  
Vol 79 (11) ◽  
pp. 1596-1598 ◽  
Author(s):  
K. H. Bai ◽  
H. Y. Chang ◽  
H. S. Uhm
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Temperature Analysis ◽  
Inductively Coupled

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

2007 ◽  
Author(s):  
Jia Cheng ◽  
Yu Zhu ◽  
Guanghong Duan ◽  
Yangying Chen
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Three Dimensional ◽  
Argon Plasma ◽  
Plasma Parameters ◽  
Inductively Coupled ◽  
Parameters Selection ◽  
Dimensional Distribution ◽  
Discharge Model ◽  
Discharge Simulation

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

Highly Selective SiO2Etching in Low-Electron-Temperature Inductively Coupled Plasma

2007 ◽  
Vol 46 (6A) ◽  
pp. 3602-3604
Author(s):  
K. H. Bai ◽  
H. Y. Chang ◽  
G. C. Kwon ◽  
H. S. Kim ◽  
J. S. Kim
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled
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