Temporal evolution of two-dimensional electron temperature and ion flux on a substrate in a pulsed-power inductively coupled plasma

2017 ◽  
Vol 24 (5) ◽  
pp. 053510 ◽  
Author(s):  
Il-seo Park ◽  
Dong-Hwan Kim ◽  
Kyung-Hyun Kim ◽  
Chin-Wook Chung
Keyword(s):  
Electron Temperature ◽  
Inductively Coupled Plasma ◽  
Temporal Evolution ◽  
Ion Flux ◽  
Pulsed Power ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Inductively Coupled

Two-dimensional density distribution of metastable atoms in an inductively coupled plasma in Ar

1998 ◽  
Vol 58 (6) ◽  
pp. 7823-7830 ◽  
Author(s):  
Masahiro Tadokoro ◽  
Hajime Hirata ◽  
Nobuhiko Nakano ◽  
Zoran Lj. Petrović ◽  
Toshiaki Makabe
Keyword(s):  
Density Distribution ◽  
Inductively Coupled Plasma ◽  
Two Dimensional ◽  
Inductively Coupled

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

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