Low resistance ohmic contact for p‐type ZnTe using Au electrode

1995 ◽  
Vol 67 (9) ◽  
pp. 1277-1279 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Masashi Yoshimura ◽  
Katsuhiko Morita ◽  
Masataka Koyama ◽  
Takafumi Yao
Keyword(s):  
Ohmic Contact ◽  
Au Electrode ◽  
Low Resistance ◽  
P Type

scholarly journals Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

2016 ◽  
Vol 109 (5) ◽  
pp. 052102 ◽  
Author(s):  
Xinyu Zhang ◽  
Yimao Wan ◽  
James Bullock ◽  
Thomas Allen ◽  
Andres Cuevas
Keyword(s):  
Copper Oxide ◽  
Ohmic Contact ◽  
Crystalline Silicon ◽  
Oxide Films ◽  
Nitrogen Doped ◽  
Low Resistance ◽  
P Type

Improved Low Resistance Contacts of Ni/Au and Pd/Au to P-Type GaN Using a Cryogenic Treatment

1999 ◽  
Vol 595 ◽  
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson ◽  
Seong-Ju Park
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Cryogenic Treatment ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Mixed Gas ◽  
Low Resistance ◽  
Specific Contact ◽  
P Type

AbstractA low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (1.41×1017 cm−3) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing at temperatures of 400 ∼ 700 °C in an oxygen and nitrogen mixed gas ambient, then subsequently cooled in liquid nitrogen which reduced the specific contact resistance from the range of 9.46∼2.80×10−2 ωcm2 to 9.84∼2.65×10−4 ωcm2 for Ni/Au and from the range of 8.35∼5.01×10−4 ωcm2 to 3.34∼1.80×10−4 ωcm2 for Pd/Au. The electrical characteristics for the contacts were examined by the current versus voltage curves and the specific contact resistance was determined by use of the circular transmission line method (c-TLM). The effects of the cryogenic process on improving Ohmic behavior (I-V linearity) and reducing the specific contact resistance will be discussed from a microstructural analysis which reveals the metallurgy of Ohmic contact formation.

scholarly journals Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

2001 ◽  
Vol 79 (12) ◽  
pp. 1822-1824 ◽  
Author(s):  
Ho Won Jang ◽  
Ki Hong Kim ◽  
Jong Kyu Kim ◽  
Soon-Won Hwang ◽  
Jung Ja Yang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

2009 ◽  
Vol 517 (14) ◽  
pp. 4039-4042 ◽  
Author(s):  
Han-Ki Kim ◽  
Min-Su Yi ◽  
Sung-Nam Lee
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
P Type

scholarly journals Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment

2000 ◽  
Vol 5 (S1) ◽  
pp. 901-907
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson ◽  
Seong-Ju Park
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Cryogenic Treatment ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Mixed Gas ◽  
Low Resistance ◽  
Specific Contact ◽  
P Type

A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (1.41×1017 cm−3) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing at temperatures of 400 ∼ 700 °C in an oxygen and nitrogen mixed gas ambient, then subsequently cooled in liquid nitrogen which reduced the specific contact resistance from the range of 9.46∼2.80×10−2 Ωcm2 to 9.84∼2.65×10−4 Ωcm2 for Ni/Au and from the range of 8.35∼5.01×10−4 Ωcm2 to 3.34∼1.80×10−4 Ωcm2 for Pd/Au. The electrical characteristics for the contacts were examined by the current versus voltage curves and the specific contact resistance was determined by use of the circular transmission line method (c-TLM). The effects of the cryogenic process on improving Ohmic behavior (I-V linearity) and reducing the specific contact resistance will be discussed from a microstructural analysis which reveals the metallurgy of Ohmic contact formation.

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Formation and Effect of Thermal Annealing for Low-Resistance Ni/Au Ohmic Contact to Phosphorous-Doped p-Type ZnO

2005 ◽  
Vol 152 (3) ◽  
pp. G179 ◽  
Author(s):  
Jae-Hong Lim ◽  
Kyoung-Kook Kim ◽  
Dae-Kue Hwang ◽  
Hyun-Sik Kim ◽  
Jin-Yong Oh ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ohmic Contact ◽  
Low Resistance ◽  
P Type

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

2001 ◽  
Vol 79 (16) ◽  
pp. 2588-2590 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Ohmic Contact ◽  
Contact Layer ◽  
Low Resistance ◽  
P Type
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