Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

2001 ◽  
Vol 90 (7) ◽  
pp. 3367-3370 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Hyeong Joon Kim ◽  
Jin Yong Kim ◽  
Young Lee
Keyword(s):  
Dielectric Constant ◽  
Infrared Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Spectroscopy Study ◽  
Low Dielectric

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Structure Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film

1996 ◽  
Vol 443 ◽  
Author(s):  
S. W. Lim ◽  
M. Miyata ◽  
T. Naito ◽  
Y. Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Polarization Component ◽  
Low Dielectric ◽  
Step Coverage

AbstractOne solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

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