Low energy ion beams for surface modification and film deposition

Author(s):  
J. Wayne Rabalais
1995 ◽  
Vol 13 (3) ◽  
pp. 1182-1187 ◽  
Author(s):  
C. A. Meli ◽  
K. S. Grabowski ◽  
D. D. Hinshelwood ◽  
S. J. Stephanakis ◽  
D. J. Rej ◽  
...  

1988 ◽  
Vol 128 ◽  
Author(s):  
Y. Lifshitz ◽  
S. R. Kasi ◽  
J. W. Rabalais

ABSTRACTA general scheme for the analysis of deposition from hyperthermal (10–5000 eV) species is presented. Successful deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation damage, and sputtering efficiency. Examples of in situ parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition is discussed. XRD evidence for epitaxial growth of diamond(111) on Si(111) is provided.


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