In Situ Parametric Investigation of the Mechanism of Diamond Film Deposition from Low Energy Ion Beams

1988 ◽  
Vol 128 ◽  
Author(s):  
Y. Lifshitz ◽  
S. R. Kasi ◽  
J. W. Rabalais
Keyword(s):  
Diamond Film ◽  
Carbon Deposition ◽  
Ion Beam ◽  
General Scheme ◽  
Ion Beams ◽  
Film Deposition ◽  
Low Energy ◽  
Trapping Efficiency ◽  
Local Concentration

ABSTRACTA general scheme for the analysis of deposition from hyperthermal (10–5000 eV) species is presented. Successful deposition involves consideration of species range, maximum local concentration obtainable, trapping efficiency, radiation damage, and sputtering efficiency. Examples of in situ parametric investigations of carbon deposition performed with a controlled mass selected UHV ion beam facility are presented. A subplantation model for diamond film deposition is discussed. XRD evidence for epitaxial growth of diamond(111) on Si(111) is provided.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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