Correlation between dark spot growth and pinhole size in organic light-emitting diodes

2001 ◽  
Vol 78 (15) ◽  
pp. 2116-2118 ◽  
Author(s):  
Shuang Fang Lim ◽  
Lin Ke ◽  
Wei Wang ◽  
Soo Jin Chua
2008 ◽  
Vol 29 (1) ◽  
pp. 67-69 ◽  
Author(s):  
Lin Ke ◽  
Ramadas Senthil Kumar ◽  
Chellappan Vijila ◽  
Soo Jin Chua ◽  
X. W. Sun

2005 ◽  
Vol 20 (1) ◽  
pp. 81-92 ◽  
Author(s):  
Soon Moon Jeong ◽  
Won Hoi Koo ◽  
Sang Hun Choi ◽  
Sung Jin Jo ◽  
Hong Koo Baik ◽  
...  

Ion-beam-assisted deposition (IBAD) was used for cathode preparation in organic light-emitting diodes to fabricate dense electrode. Dark spot growth rate was decreased by employing the IBAD process due to a highly packed aluminum structure inhibiting the permeation of H2O and O2. However, undesirable leakage current was generated because energetic particles of Al assisted by Ar+ ion may damage the organic material resulting in reduction of contact resistance. The decrease of contact resistance in the IBAD device may be caused by large contact area, increase of density of states, and Li diffusion to phenyl-substituted poly-p-phenylene vinylene.


2006 ◽  
Vol 89 (13) ◽  
pp. 132108 ◽  
Author(s):  
Soo Young Kim ◽  
Kwang Young Kim ◽  
Yoon-Heung Tak ◽  
Jong-Lam Lee

2011 ◽  
Author(s):  
Merric Srour ◽  
Richard Fu ◽  
Steven Blomquist ◽  
Jianmin Shi ◽  
Eric Forsythe ◽  
...  

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