In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

2001 ◽  
Vol 78 (13) ◽  
pp. 1838-1840 ◽  
Author(s):  
M. Furusawa ◽  
J. Tashiro ◽  
A. Sasaki ◽  
K. Nakajima ◽  
M. Takakura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ultrathin Films ◽  
Room Temperature ◽  
In Situ Analysis ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

In-Situ Caiciss Study Of Dynamic Process Of Oxygen Desorption On TiO2-Terminated SrTiO3(001) Surface

1997 ◽  
Vol 474 ◽  
Author(s):  
T. Nishihara ◽  
O. Ishiyama ◽  
S. Hayashi ◽  
M. Shinohara ◽  
M. Yoshimoto ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Incident Angle ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ion Scattering ◽  
Peak Intensity ◽  
Ion Scattering Spectroscopy ◽  
Topmost Layer

ABSTRACTThe topmost atoms of TiO2 - terminated SrTiO3(001) annealed at temperatures between room temperature and 800°C in ultra high vacuum (UHV), have been studied by means of in-situ coaxial impact collision ion scattering spectroscopy (CAICISS). Both time-of-flight spectra at the incident angle of 45.0°C along [ 100] azimuth and of 35.3°C along [110] azimuth revealed Ti and weak O peaks and no Sr peak at 150°C, which means that the topmost layer at 150°C is terminated by TiCh-plane, completely. On the other hand, as increasing the substrate temperature, Sr peak began to appear above 400°C. This Sr peak intensity from both directions was drastically increased with elevating the substrate temperature. This indicates that the topmost O and Ti atoms desorb from the surface at the higher substrate temperature. The ratio Sr/Ti corresponds to the amount of the topmost oxygen or titanium vacancies due to the desorption. It was found that 40 % of the topmost oxygen atoms and 32% of the topmost titanium atoms desorb from TiO2-terminated SrTiO3(001) surface at 800°C. The activation energies for oxygen and titanium desorption were 0.28eV and 0.40eV, respectively.

In-situ analysis of the microstrains during tensile deformation of an AlSi-MMC at room temperature and elevated temperature

2001 ◽  
Vol 9 (2) ◽  
pp. 435-442 ◽  
Author(s):  
A. Pyzalla ◽  
A. Jacques ◽  
J. -P. Feiereisen ◽  
T. Buslaps ◽  
T. D'Almeida ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Room Temperature ◽  
Tensile Deformation ◽  
In Situ Analysis

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

In situ determination of the terminating layer of La0.7Sr0.3MnO3 thin films using coaxial impact-collision ion scattering spectroscopy

1998 ◽  
Vol 73 (2) ◽  
pp. 187-189 ◽  
Author(s):  
M. Yoshimoto ◽  
H. Maruta ◽  
T. Ohnishi ◽  
K. Sasaki ◽  
H. Koinuma
Keyword(s):  
Thin Films ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Pd/Ni(111) surface structure by impact-collision ion scattering spectroscopy

2005 ◽  
Vol 908 ◽  
Author(s):  
Kenji Umezawa ◽  
Kaname Yamauchi ◽  
Shigemitsu Nakanishi ◽  
Walter M Gibson
Keyword(s):  
Substrate Temperature ◽  
Surface Structure ◽  
Epitaxial Growth ◽  
Low Energy ◽  
Surface Alloying ◽  
Ion Scattering ◽  
Low Energy Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Different Types

AbstractPd deposits on Ni(111) have been studied by low energy ion scattering spectroscopy. We found that two different types of epitaxial growth exist: Pd[11 2]//Ni[11 2] and Pd[11 2]//Ni[11 2] at substrate temperature of 300 K. The Pd(111) planes grow as mixed domains of 50 % each. Surface alloying of the Pd-Ni system was confirmed for deposition at 300 K in which Pd atoms displace first-layer Ni atoms, with an outward displacement of 0.4 Å with respect to first layer Ni atoms.

Room-temperature epitaxial growth and in situ CAICISS surface analysis of wurtzite-type thin films

2005 ◽  
Vol 232 (1-4) ◽  
pp. 305-311 ◽  
Author(s):  
Atsushi Sasaki ◽  
Wakana Hara ◽  
Akifumi Matsuda ◽  
Shusaku Akiba ◽  
Norihiro Tateda ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Surface Analysis ◽  
Room Temperature

Initial Stages of Reactions between Monolayer Fe and Si(001) Surfaces

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Hasegawa ◽  
N. Kobayashi ◽  
N. Hayashi
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
High Energy ◽  
Rheed Pattern ◽  
High Energy Electron ◽  
Type B ◽  
Ion Scattering ◽  
Temperature Deposition ◽  
Hydrogen Termination

AbstractReactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2 × 1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2 × 1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560∼650°C composite heteroepitaxial layer of both type A and type B β -FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700°C. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500°C, however the annealing above 710°C leads to the diffusion. We obtained 2D ordered surface, which showed 3 × 3 RHEED pattern as referenced to the primitive unreconstructed Si(O01) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470°C.

In-Situ Measurement ofHe+Stopping in Si Layers by Low-Energy Ion-Scattering Spectroscopy

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1937-1939 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Kiyokazu Nakagawa ◽  
Akio Nishida
Keyword(s):  
Low Energy ◽  
In Situ Measurement ◽  
Ion Scattering ◽  
Low Energy Ion Scattering ◽  
Ion Scattering Spectroscopy
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