Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics
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1994 ◽
Vol 41
(6)
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pp. 2567-2573
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1992 ◽
Vol 19
(1-4)
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pp. 605-608
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1998 ◽
Vol 42
(9)
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pp. 1679-1687
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2002 ◽
Vol 97
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pp. 563-568
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