Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

2001 ◽  
Vol 78 (6) ◽  
pp. 754-756 ◽  
Author(s):  
V. Bousquet ◽  
J. Heffernan ◽  
J. Barnes ◽  
S. Hooper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gas Source

Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
T. P. Chin ◽  
J. C. P. Chang ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
P. D. Kirchner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Energy ◽  
Threading Dislocation ◽  
Dislocation Loops ◽  
Double Crystal ◽  
X Ray ◽  
Gas Source

ABSTRACTInxGa1−xP(x>0.27) grown on a GaP substrate has a large direct-bandgap, which is suitable for yellow light emission on a transparent substrate. Because of the large lattice mismatch, usually a thick (10–20 μm) graded buffer layer was required to reduce the threading dislocation density. In this work we report that a thin (1.2 μm for x≃0.35), linearly graded buffer layer can filter out dislocations effectively. The structures were grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) intensity oscillations and X-ray double-crystal diffraction were used to control and determine the composition, respectively. Threading dislocations are well confined in the buffer layer, as shown under transmission electron microscopy. Dislocation loops injected into the substrate were observed, similar to those observed in the Six Ge1−x/Si system. X-ray analysis also shows that the 3% mismatched buffer layer is fully relaxed. This relaxed buffer layer then can serve as a substrate for further growth. Homojunction and heterojunction light emitting diodes were fabricated to demonstrate the material quality.

scholarly journals Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si

1996 ◽  
Vol 90 (4) ◽  
pp. 789-792
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
U. Rossner ◽  
A. Barski
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gas Source ◽  
Aln Buffer

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

scholarly journals Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

2021 ◽  
Vol 549 ◽  
pp. 149245
Author(s):  
Chaomin Zhang ◽  
Kirstin Alberi ◽  
Christiana Honsberg ◽  
Kwangwook Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Surface Treatments ◽  
Gaas Surface
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