InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas‐source molecular beam epitaxy

1994 ◽  
Vol 64 (15) ◽  
pp. 2001-2003 ◽  
Author(s):  
T. P. Chin ◽  
H. Q. Hou ◽  
C. W. Tu ◽  
J. C. P. Chang ◽  
N. Otsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy

1985 ◽  
Vol 47 (4) ◽  
pp. 394-396 ◽  
Author(s):  
H. Temkin ◽  
M. B. Panish ◽  
P. M. Petroff ◽  
R. A. Hamm ◽  
J. M. Vandenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source

Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy

1991 ◽  
Vol 69 (2) ◽  
pp. 752-756 ◽  
Author(s):  
M. J. Hafich ◽  
H. Y. Lee ◽  
G. Y. Robinson ◽  
D. Li ◽  
N. Otsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Gas Source
Sign in / Sign up

Export Citation Format

Share Document