Solid phase epitaxy of implantation-induced amorphous layer in (11̄00)- and (112̄0)-oriented 6H-SiC

2001 ◽  
Vol 89 (3) ◽  
pp. 1986 ◽  
Author(s):  
Masataka Satoh ◽  
Yuuki Nakaike ◽  
Tomonori Nakamura
Keyword(s):  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy

The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon

1990 ◽  
Vol 205 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
C. Kirschbaum
Keyword(s):  
Growth Rate ◽  
Solid Phase ◽  
Intrinsic Value ◽  
Amorphous Layer ◽  
Inert Gas ◽  
Solid Phase Epitaxy ◽  
Depth Profiles ◽  
Kinetics Of ◽  
Crystal Interface ◽  
Good Agreement

AbstractThis paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.

Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

1990 ◽  
Vol 205 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. J. Eaglesham ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Solid Phase ◽  
Amorphous Material ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Small Deviations ◽  
Random Nucleation ◽  
Low Concentrations ◽  
Critical Metal ◽  
Amorphous Si

AbstractThe competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Solid phase epitaxy of Germanium on Silicon substrates

2011 ◽  
Vol 1339 ◽  
Author(s):  
R.R. Lieten ◽  
Q.-B. Ma ◽  
J. Guzman ◽  
J.W. Ager ◽  
E.E. Haller ◽  
...  
Keyword(s):  
Solid Phase ◽  
Chemical Vapor ◽  
High Growth ◽  
Amorphous Layer ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Germanium Layer ◽  
Temperature Deposition

ABSTRACTWe demonstrate the possibilities of plasma enhanced chemical vapor deposition (PECVD) and solid phase epitaxy to obtain germanium on silicon with excellent crystalline properties, even for very thin layers (< 100 nm). Amorphous germanium layers are deposited by PECVD on silicon substrates. Deposition of an amorphous layer, without the presence of crystalline seeds, is critical. Crystalline inclusions must be avoided to obtain high crystal quality and a smooth surface after crystallization. PECVD is well suited for deposition of amorphous layers because low temperature deposition and high growth rates are possible. Additional experiments with molecular beam epitaxy show that it is not mandatory to have hydrogen present inside the germanium layer to obtain highly crystalline germanium. Atomic hydrogen plays, however, an important role during deposition by lowering the surface adatom mobility and consequently increasing the disorder of the deposited layer. Synchrotron X-ray diffraction shows no germanium diffraction, indicating that the layer does not contain crystalline seeds. Crystallization can be performed at limited temperatures: Raman measurements show crystallization between 400 and 425 °C. Another important advantage of the proposed method is the scalability: germanium layers of larger diameter can be obtained by simply using larger silicon substrates.

Solid-Phase Epitaxy - Role of Point Defects in Amorphous Solids

1993 ◽  
Vol 319 ◽  
Author(s):  
T.K. Chaki
Keyword(s):  
Epitaxial Growth ◽  
Point Defects ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Amorphous Solid ◽  
Amorphous Layer ◽  
Amorphous Solids ◽  
Solid Phase Epitaxy ◽  
Self Diffusion

AbstractA model of solid-phase epitaxial growth (SPEG), explaining enhancing effects of ion-irradiation and dopants, is presented. The crystallization is by the adjustment of atomic positions in the amorphous side of the crystalline/amorphous (c-a) interface due to self-diffusion in the amorphous solid, assisted by a freeenergy decrease associated with the transformation from the amorphous (a) to crystalline (c) phase. Irradiation and electrically active dopants increase the selfdiffusivity of a-phase by generating point defects in the amorphous layer and thus enhance crystallization. An expression for the velocity of epitaxial growth is derived. The low activation energy of ion-induced SPEG is due to recombination of point defects in the a-phase.

Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfaces and Recovery of Crystallinity by Thermal Annealing Observed With Scanning Tunneling Microscopy

1993 ◽  
Vol 321 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Reconstructed Surface

ABSTRACTThe solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si (001) surfaces and recovery of crystallinity by thermal annealing are studied “in situ” by using a scanning tunneling Microscope (STM). As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. The grains gradually coalesce and form clusters of 2–3.6 nm in diameter at annealing temperature of 245° C (2×1) and (1×2) reconstructed regions surrounded by amorphous regions are partially observed on the surface by prolonged annealing, which suggests the onset of SPE. Successive observation reveals that the smoothing of the surface occurs layer by layer. As annealing temperature is raised up to 445 °C, the amorphous layer epitaxially crystallizes up to the topmost surface, and (2×1) reconstructed surface with Monatomic-height steps is observed. The smoothing of the surface structures and the formation of nucleation of Si islands are observed during annealing at 500 °C.

Epitaxial growth versus nucleation in amorphous Si doped with Cu and Ag

1993 ◽  
Vol 8 (4) ◽  
pp. 820-829 ◽  
Author(s):  
J.S. Custer ◽  
Michael O. Thompson ◽  
D.J. Eaglesham ◽  
D.C. Jacobson ◽  
J.M. Poate
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solubility Limit ◽  
Solid Phase Epitaxy ◽  
Metal Impurities ◽  
Random Nucleation ◽  
Si Doped ◽  
Amorphous Si

The competition between solid phase epitaxy and random nucleation in amorphous Si implanted with Cu and Ag has been studied. At low metal concentrations, solid phase epitaxy proceeds with slight deviations from the intrinsic rate, with the impurity segregated and evenly distributed in the amorphous layer. At an impurity concentration of 0.12 at.%, rapid nucleation occurs, transforming the remaining layer into polycrystalline Si. The nucleation rate is ≥108 the intrinsic homogeneous rate. The effects of the metals on epitaxy scale with the amount of metal–Si interaction. Nucleation appears to occur when the metal impurities exceed their absolute solubility limit and begin to phase separate.

Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1756-1758 ◽  
Author(s):  
J. B. Posthill ◽  
R. J. Markunas ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
K. Das ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy
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