Ultralarge capacitance–voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
AbstractA study is presented of the geometrical shape of deposition contours that arise when material is evaporated from a point source onto an inclined substrate, an arrangement common in ion-assisted deposition. The shape of the contours, as determined by the inverse square law and the angles of emission and incidence, is described by a fourth-order algebraic equation in polar coordinates on the surface of the substrate. The equation defines a family of distorted ellipses whose form depends on the angle of tilt. An experimental test of these relations by electron-beam deposition of an ion-bombarded oil film on a tilted silicon wafer will be reported.
AbstractNano-crystalline silicon (nc-Si) thin films were directly deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and ion beam assisted electron beam deposition (IBAED) method. In the sample deposited by ECR-CVD, the room temperature photoluminescence originated from the nc-Si and the silicon-hydrogen bond were appeared. It was confirmed that the size of the nc-Si could be controlled up to about 3 nm with the low substrate temperature during the deposition process and then the hydrogen atoms play a very important role in the formation of the nc-Si. The IBAED method was also found to an useful technique for nc-Si formation by the control of ion beam power.