Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

Bei Ping Yan; Hong Wang; Geok Ing Ng

doi:10.1063/1.1336551

Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.1336551 ◽

2000 ◽

Vol 77 (25) ◽

pp. 4217-4219

Author(s):

Bei Ping Yan ◽

Hong Wang ◽

Geok Ing Ng

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Ionization Coefficient ◽

Avalanche Multiplication

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Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904230 ◽

2002 ◽

Author(s):

Bei Ping Yan ◽

E.S. Yang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Ionization Coefficient ◽

Avalanche Multiplication

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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Chinese Physics B ◽

10.1088/1674-1056/20/10/108502 ◽

2011 ◽

Vol 20 (10) ◽

pp. 108502 ◽

Cited By ~ 2

Author(s):

Xiao-Bo Xu ◽

He-Ming Zhang ◽

Hui-Yong Hu ◽

Yu-Chen Li ◽

Jiang-Tao Qu

Keyword(s):

Thin Film ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Silicon On Insulator ◽

Avalanche Multiplication ◽

Thin Film Silicon

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Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors

IEEE Transactions on Electron Devices ◽

10.1109/16.842953 ◽

2000 ◽

Vol 47 (6) ◽

pp. 1125-1133 ◽

Cited By ~ 19

Author(s):

Hong Wang ◽

Geok-Ing Ng

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Avalanche Multiplication ◽

Double Heterojunction

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Measurement of the electron ionization coefficient at low electric fields in GaAs-based heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.311132 ◽

1994 ◽

Vol 15 (9) ◽

pp. 354-356 ◽

Cited By ~ 19

Author(s):

C. Canali ◽

F. Capasso ◽

R. Malik ◽

A. Neviani ◽

P. Pavan ◽

...

Keyword(s):

Electric Fields ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Electron Ionization ◽

Ionization Coefficient

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Analysis of avalanche multiplication and breakdown in GaInP/GaAs composite double heterojunction bipolar transistors

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174961 ◽

2003 ◽

Author(s):

Y.L. Goh ◽

D.S. Ong

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Avalanche Multiplication ◽

Double Heterojunction

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Theoretical and experimental investigation of temperature-dependent avalanche multiplication in InP-based heterojunction bipolar transistors with InGaAs/InP composite collector

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205336 ◽

2003 ◽

Cited By ~ 1

Author(s):

Hong Wang ◽

Hong Yang ◽

K. Radhakrishnan

Keyword(s):

Experimental Investigation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Temperature Dependent ◽

Avalanche Multiplication

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An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/28/7/078505 ◽

2011 ◽

Vol 28 (7) ◽

pp. 078505 ◽

Cited By ~ 2

Author(s):

Xiao-Bo Xu ◽

He-Ming Zhang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Silicon On Insulator ◽

Avalanche Multiplication

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Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.816553 ◽

2003 ◽

Vol 50 (10) ◽

pp. 2021-2026 ◽

Cited By ~ 6

Author(s):

M. Yee ◽

W.K. Ng ◽

J.P.R. David ◽

P.A. Houston ◽

C.H. Tan ◽

...

Keyword(s):

Temperature Dependence ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Avalanche Multiplication

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Measurement of the electron ionization coefficient at low electric fields in InGaAs‐based heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.113583 ◽

1995 ◽

Vol 66 (9) ◽

pp. 1095-1097 ◽

Cited By ~ 31

Author(s):

C. Canali ◽

C. Forzan ◽

A. Neviani ◽

L. Vendrame ◽

E. Zanoni ◽

...

Keyword(s):

Electric Fields ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Electron Ionization ◽

Ionization Coefficient

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Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.678515 ◽

1998 ◽

Vol 45 (6) ◽

pp. 1207-1212 ◽

Cited By ~ 26

Author(s):

R.M. Flitcroft ◽

J.P.R. David ◽

P.A. Houston ◽

C.C. Button

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Avalanche Multiplication

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