scholarly journals Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier

2007 ◽  
Vol 11 (3) ◽  
pp. 294-297
Author(s):  
S. D. Lin ◽  
C. P. Lee ◽  
V. V. Ilchenko ◽  
D. I. Sheka ◽  
O. V. Tretyak ◽  
...  
1992 ◽  
Vol 06 (28) ◽  
pp. 1811-1817
Author(s):  
L.Y. CHEN ◽  
C.S. TING

The I–V characteristics of a 3D double-barrier resonant-tunneling structure is investigated to demonstrate the differences between coherent and sequential tunneling mechanisms. Increasing the ratio of phase-breaking scattering rate over tunneling broadening width from 0 to ∞, tunneling transport goes from the coherent to the sequential limit. In the first resonance region, I–V curve does not distinguish these two processes. In the second and higher resonance regimes, however, sequential tunneling current becomes appreciably larger than its coherent counterpart.


1996 ◽  
Vol 53 (20) ◽  
pp. 13651-13655 ◽  
Author(s):  
P. D. Buckle ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
R. Grey ◽  
G. Hill ◽  
...  

1996 ◽  
Vol 79 (11) ◽  
pp. 8844-8846 ◽  
Author(s):  
J. W. Cockburn ◽  
P. D. Buckle ◽  
M. S. Skolnick ◽  
M. J. Birkett ◽  
R. Teissier ◽  
...  

1998 ◽  
Vol 32 (1) ◽  
pp. 112-115
Author(s):  
A. A. Beloushkin ◽  
Yu. A. Efimov ◽  
A. S. Ignat’ev ◽  
A. L. Karuzskii ◽  
V. N. Murzin ◽  
...  

1994 ◽  
Vol 64 (18) ◽  
pp. 2400-2402 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
D. M. Whittaker ◽  
P. D. Buckle ◽  
A. R. K. Willcox ◽  
...  

1992 ◽  
Vol 45 (12) ◽  
pp. 6721-6730 ◽  
Author(s):  
C. R. H. White ◽  
M. S. Skolnick ◽  
L. Eaves ◽  
M. L. Leadbeater ◽  
M. Henini ◽  
...  

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