Surface effects and high quality factors in ultrathin single-crystal silicon cantilevers

2000 ◽  
Vol 77 (23) ◽  
pp. 3860-3862 ◽  
Author(s):  
Jinling Yang ◽  
Takahito Ono ◽  
Masayoshi Esashi
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Surface Effects ◽  
Quality Factors ◽  
High Quality ◽  
Crystal Silicon

High-quality cutting of polished single-crystal silicon by wire electrical discharge machining

2005 ◽  
Vol 29 (4) ◽  
pp. 423-430 ◽  
Author(s):  
Hideo Takino ◽  
Toshimitsu Ichinohe ◽  
Katsunori Tanimoto ◽  
Syuichi Yamaguchi ◽  
Kazushi Nomura ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Single Crystal Silicon ◽  
Wire Electrical Discharge Machining ◽  
High Quality ◽  
Crystal Silicon

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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