Simulated and measured data-line parasitic capacitance of amorphous silicon large-area image sensor arrays

2001 ◽  
Vol 89 (1) ◽  
pp. 638-647 ◽  
Author(s):  
M. Mulato ◽  
J. P. Lu ◽  
R. A. Street
Nano Letters ◽  
2011 ◽  
Vol 11 (6) ◽  
pp. 2214-2218 ◽  
Author(s):  
William S. Wong ◽  
Sourobh Raychaudhuri ◽  
René Lujan ◽  
Sanjiv Sambandan ◽  
Robert A. Street

1997 ◽  
Vol 487 ◽  
Author(s):  
R. A. Street ◽  
R. B. Apte ◽  
S. E. Ready ◽  
R. L. Weisfield ◽  
P. Nylen

AbstractLarge area amorphous silicon image sensor arrays are important for x-ray medical imaging and document scanning as well as a variety of other applications where large sensor size is required. The paper first summarizes the present state of the flat panel x-ray imager technology, and compares the two main approaches for x-ray detection. We then describe the performance of a new, large area, high resolution, radiographic imager based on a single amorphous silicon array with 2304×3200 pixels, and an active area of 30×40 cm (12×1 6”).


1996 ◽  
Vol 198-200 ◽  
pp. 1151-1154 ◽  
Author(s):  
R.A. Street ◽  
X.D. Wu ◽  
R. Weisfield ◽  
S. Ready ◽  
R. Apte ◽  
...  

1993 ◽  
Vol 297 ◽  
Author(s):  
C Van Berkel ◽  
N C Bird ◽  
C J Curling ◽  
I D French

2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.


1995 ◽  
Vol 377 ◽  
Author(s):  
R. A. Street ◽  
X. D. Wu ◽  
R. Weisfield ◽  
S. Ready ◽  
R. Apte ◽  
...  

ABSTRACTLarge two dimensional amorphous silicon image sensor arrays offer a new approach to electronic document input and x-ray imaging. The sensor array technology is now capable of image capture at greater than 10 frames/sec and with resolution of 200–400 spi. We describe our new high resolution imaging system, comprising a page-sized sensor array with nearly 3 million pixels, and the accompanying high speed read out and processing electronics. The key technological issues of pixel resolution, sensor fill factor, leakage currents and noise are reviewed. Measurements of a new array architecture are described, in which the sensor is formed as a single continuous film on top of the matrix addressing components.


1993 ◽  
Author(s):  
Robert A. Street ◽  
Richard L. Weisfield ◽  
Steven E. Nelson ◽  
R. Chang

2001 ◽  
Vol 19 (4) ◽  
pp. 1219-1223 ◽  
Author(s):  
J. H. Daniel ◽  
B. Krusor ◽  
R. B. Apte ◽  
M. Mulato ◽  
K. Van Schuylenbergh ◽  
...  

2008 ◽  
Vol 1066 ◽  
Author(s):  
Jackson Lai ◽  
Denis Striakhilev ◽  
Yuri Vygranenko ◽  
Gregory Heiler ◽  
Arokia Nathan ◽  
...  

ABSTRACTLarge area digital imaging made possible by amorphous silicon thin-film transistor (a-Si TFT) technology, coupled with a-Si photo-sensors, provides an excellent readout platform to form an integrated medical image capture system. Major development challenges evolve around optimization of pixel architecture for detector fill factor, and manufacturability, while suppressing noise stemming from pixel array and external electronics. This work discusses the behavior and modeling of system noise that arises from imaging array operations. An active pixel sensor (APS) design with on-pixel amplification is studied. Our evaluation demonstrates that a 17 inch by 17 inch array can achieve system noise as low as 1000 electrons through proper design and optimization.


1998 ◽  
Vol 227-230 ◽  
pp. 1306-1310 ◽  
Author(s):  
R.A Street ◽  
R.B Apte ◽  
T Granberg ◽  
P Mei ◽  
S.E Ready ◽  
...  

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