Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets. Part II. Electrostatic probe measurements

2000 ◽  
Vol 88 (11) ◽  
pp. 6868-6874 ◽  
Author(s):  
R. M. Mayo ◽  
J. W. Newman ◽  
Y. Yamagata ◽  
A. Sharma ◽  
J. Narayan
Keyword(s):  
Comparative Study ◽  
Single Crystal ◽  
Amorphous Carbon ◽  
Pulsed Laser ◽  
Plasma Plumes ◽  
Electrostatic Probe ◽  
Probe Measurements

Plasma Diagnostics During Pulsed Laser Deposition of Diamond-Like Carbon Using Single Crystal Graphite and Amorphous Carbon

1999 ◽  
Vol 593 ◽  
Author(s):  
Y Yamagata ◽  
A. Sharma ◽  
J. Narayan ◽  
R. M. Mayo ◽  
J. W. Newman ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Emission Intensity ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Plasma Plumes

ABSTRACTOptical emission study of ablation plasma plumes from single crystal graphite (SCG) and amorphous carbon (a-C) targets during the preparation of diamond-like carbon (DLC) films by KrF excimer pulsed laser deposition (PLD) has been investigated. The C I emission intensity increases with laser energy density (EL) increase, while the C2 emission changes drastically with EL for both ablated plasma plumes. The C2/C emission intensity ratio for the a-C plume decreases with EL increase, while the C2/C ratio for the SCG plume decreases with EL increase up to 3.0 J/cm2, then increases slightly with further EL increase Nanohardness of the DLC films decreases with the C2/C ratio increase. It is suggested that the C2 molecule in the plasma plume does not play an important role in producing high quality DLC films, and that the C2/C ratio is a good parameter to monitor the PLD process.

Pulsed laser processing of nano-polycrystalline diamond: A comparative study with single crystal diamond

2009 ◽  
Vol 18 (5-8) ◽  
pp. 877-880 ◽  
Author(s):  
Shoko Odake ◽  
Hiroaki Ohfuji ◽  
Takuo Okuchi ◽  
Hiroyuki Kagi ◽  
Hitoshi Sumiya ◽  
...  
Keyword(s):  
Comparative Study ◽  
Single Crystal ◽  
Laser Processing ◽  
Pulsed Laser ◽  
Polycrystalline Diamond ◽  
Single Crystal Diamond ◽  
Pulsed Laser Processing

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based
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