Plasma Diagnostics During Pulsed Laser Deposition of Diamond-Like Carbon Using Single Crystal Graphite and Amorphous Carbon

1999 ◽  
Vol 593 ◽  
Author(s):  
Y Yamagata ◽  
A. Sharma ◽  
J. Narayan ◽  
R. M. Mayo ◽  
J. W. Newman ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Emission Intensity ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Plasma Plumes

ABSTRACTOptical emission study of ablation plasma plumes from single crystal graphite (SCG) and amorphous carbon (a-C) targets during the preparation of diamond-like carbon (DLC) films by KrF excimer pulsed laser deposition (PLD) has been investigated. The C I emission intensity increases with laser energy density (EL) increase, while the C2 emission changes drastically with EL for both ablated plasma plumes. The C2/C emission intensity ratio for the a-C plume decreases with EL increase, while the C2/C ratio for the SCG plume decreases with EL increase up to 3.0 J/cm2, then increases slightly with further EL increase Nanohardness of the DLC films decreases with the C2/C ratio increase. It is suggested that the C2 molecule in the plasma plume does not play an important role in producing high quality DLC films, and that the C2/C ratio is a good parameter to monitor the PLD process.

Characteristics of Laser-Ablated Plasma and Properties Of Diamond-Like Carbon Film In Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Yukihiko Yamagata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Raj K. Thareja ◽  
Kenji Ebihara ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Carbon Film ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Ccd Camera ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Diamond Like Carbon Film ◽  
Swan Band

AbstractCharacteristics of laser-ablated carbon plasma and properties of diamond-like carbon film in KrF pulsed laser deposition were investigated using laser-induced fluorescence (LIF) and optical emission spectroscopy. Two-dimensional LIF images of C2 (Swan band, d3Φg – a3Φu) and C3 (Comet Head System, A1Φu –X1Σg+) molecules were detected as a function of laser energy density by narrow band pass filters and an intensified CCD camera. C2 LIF intensity is found to be weaker in the central part of the plume than that at the periphery at incident energy greater than 6 J/cm2. It is conjectured that C2 molecules are dissociated by collision with energetic species in the central part of the ablation plume, and degrade the diamond-like property of deposited films.

Laser-Induced Thermoelectric Voltage in La0.5Pr0.5MnO3 Thin Film

2011 ◽  
Vol 287-290 ◽  
pp. 2248-2251
Author(s):  
Qian Qian Hua ◽  
Li Sheng Zhang ◽  
Pei Jie Wang
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Colossal Magnetoresistance ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thermoelectric Voltage ◽  
First Time

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.

Laser Induced Fluorescence Measurement Of Plasma Plume During Pulsed Laser Deposition Of Diamond-Like Carbon

2000 ◽  
Vol 617 ◽  
Author(s):  
Yukihiko Yamagata ◽  
Yuji Kozai ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Plasma Plume ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Induced Fluorescence ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Fluorescence Measurement ◽  
Ablation Plasma ◽  
Ablation Plasma Plume

AbstractDynamics of carbon ablation plasma plume during the preparation of diamond-like carbon films by KrF excimer pulsed laser deposition was investigated using laser induced fluorescence (LIF) and optical emission spectroscopy. LIF signal from C2molecule (Swan band, d 3Φg – a3Φu) was detected using a photomultiplier tube and an intensified CCD camera. Temporal evolution and spatial distribution of C2 molecules in the ablated plume were measured as a function of laser energy density and ablation area. LIF intensity is found to be weaker in the central part of the plume than that at the periphery at incident energy greater than 6 J/cm2. It is conjectured that some of C2molecules are dissociated by collision with energetic species in central part of the ablation plume. Dynamics of ablation plasma plume is strongly dependent on the size of ablated area.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

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