Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Kangguo Cheng; Jinju Lee; Joseph W. Lyding

doi:10.1063/1.1317546

Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1317546 ◽

2000 ◽

Vol 77 (15) ◽

pp. 2358-2360 ◽

Cited By ~ 10

Author(s):

Kangguo Cheng ◽

Jinju Lee ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deuterium Incorporation ◽

Hot Carrier

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Spontaneous hot-carrier photon emission rates in silicon: Improved modeling and applications to metal oxide semiconductor devices

Physical Review B ◽

10.1103/physrevb.65.195209 ◽

2002 ◽

Vol 65 (19) ◽

Cited By ~ 9

Author(s):

M. Pavesi ◽

P. L. Rigolli ◽

M. Manfredi ◽

P. Palestri ◽

L. Selmi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Photon Emission ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Emission Rates ◽

Hot Carrier

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Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.100177 ◽

1988 ◽

Vol 53 (26) ◽

pp. 2620-2622 ◽

Cited By ~ 53

Author(s):

M. Herzog ◽

F. Koch

Keyword(s):

Metal Oxide ◽

Light Emission ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier

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Total dose dependence of hot carrier injection effect in the n-channel metal oxide semiconductor devices

Acta Physica Sinica ◽

10.7498/aps.65.246101 ◽

2016 ◽

Vol 65 (24) ◽

pp. 246101

Author(s):

He Yu-Juan ◽

Zhang Xiao-Wen ◽

Liu Yuan

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Semiconductor Devices ◽

Dose Dependence ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection ◽

Injection Effect

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4891847 ◽

2014 ◽

Vol 105 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

G. Gruber ◽

P. Hadley ◽

M. Koch ◽

T. Aichinger

Keyword(s):

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Hot Carrier ◽

Electrically Detected Magnetic Resonance ◽

Effect Transistor

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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