Topography-induced contributions to friction forces measured using an atomic force/friction force microscope

2000 ◽  
Vol 88 (8) ◽  
pp. 4825 ◽  
Author(s):  
Sriram Sundararajan ◽  
Bharat Bhushan
Keyword(s):  
Friction Force ◽  
Friction Forces ◽  
Atomic Force ◽  
Friction Force Microscope

TEM Observation of Microstructural Change of Silicon Single Crystal Caused by Scratching Tests Using SPM

2004 ◽  
Vol 841 ◽  
Author(s):  
M. Takagi ◽  
K. Onodera ◽  
H. Iwata ◽  
T. Imura ◽  
K. Sasaki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Friction Force ◽  
Amorphous Region ◽  
Silicon Single Crystal ◽  
Microstructural Change ◽  
First Line ◽  
Cross Sectional ◽  
Atomic Force ◽  
Friction Force Microscope

ABSTRACTIn this study, the microstructural change of the surface of Si single crystal (Si(100)) after the scratching tests under very small loading forces was investigated. At first, line-scratching tests and scanning-scratching tests were carried out using an atomic force/friction force microscope (AFM/FFM). Next, cross-sectional TEM observations of the wear marks which were generated by the scratching tests were carried out. As a result of the TEM observations after the line-scratching tests, it was found that dislocations were observed in the area of less than 100nm thickness from the surface of the wear marks which were formed under the loading forces of more than 5μN. In the case of the loading forces of more than 20μN, an amorphous region was also observed just under the wear marks. As a result of the TEM observations after the scanning-scratching tests, it was found that the introduction of dislocations took place and no amorphous region appeared. It was also found that the several atomic layers at the top surface of the wear marks shifted in parallel to (100).

The Friction Forces Between Si Tip and Multilayer Graphene

2012 ◽  
Author(s):  
Yan Zhang ◽  
Yingying Wang ◽  
Yunfei Chen ◽  
Yujuan Wang
Keyword(s):  
Friction Force ◽  
Graphene Layer ◽  
Adhesion Force ◽  
Normal Load ◽  
Multilayer Graphene ◽  
Friction Forces ◽  
Layer Number ◽  
Si Substrates ◽  
Atomic Force ◽  
Natural Oxide

Mechanical peeling method is used to prepare multilayer graphene on silicon wafer with natural oxide, and the layer number of graphene is determined through atomic force microsopy (AFM) topography image and optical image. The friction force between Silicon tip and multilayer graphene and SiO2/Si substrates is measured with AFM. It is found that the friction force is reduced with the increase of the graphene layer number and approaches the value between the Si tip and graphite. Through comparing the tip sliding on graphene with different layers, the deformation of graphene is believed to be the main reason causing the decrease of the friction force with the layer number. When the normal load is much larger than the adhesion force, friction force increases with normal load linearly. However, while normal load closes to the adhesion force, friction force is independent of the normal load.

The Effect of Asperity Array Geometry on Friction and Pull-Off Force

1997 ◽  
Vol 119 (4) ◽  
pp. 781-787 ◽  
Author(s):  
Yasuhisa Ando ◽  
Jiro Ino
Keyword(s):  
Friction Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Groove Depth ◽  
Radius Of Curvature ◽  
Silicon Plate ◽  
Friction Forces ◽  
Atomic Force ◽  
Platinum Layer ◽  
Array Geometry

The friction and pull-off forces between regular asperity arrays with various heights on a silicon wafer and a scanning probe of an atomic force microscope (AFM) were measured. We used two-dimensional periodic asperity arrays. The arrays were created by using a focused ion beam (FIB) to mill patterns on a silicon plate and on a platinum layer deposited on a silicon plate. For both materials, the distance between adjacent peaks was about 240 nm and the groove depth ranged from about 3 to 49 nm. The probe of the AFM was a square flat, 0.7 × 0.7 μm2. For the silicon array, the pull-off force decreased with increasing groove depth and was proportional to the radius of curvature of the asperity. The friction force also decreased with asperity height and was proportional to both the asperity curvature and the pull-off force. For the platinum asperity array, although both the pull-off and friction forces also decreased with groove depth, the friction coefficient (calculated by dividing the friction force by the pull-off force) was about half that of the silicon asperity array.

scholarly journals Influence of Nanoscale Textured Surfaces and Subsurface Defects on Friction Behaviors by Molecular Dynamics Simulation

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1617 ◽  
Author(s):  
Ruiting Tong ◽  
Zefen Quan ◽  
Yangdong Zhao ◽  
Bin Han ◽  
Geng Liu
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Friction Force ◽  
Copper Substrate ◽  
Dynamics Simulation ◽  
Textured Surfaces ◽  
Friction Forces ◽  
Subsurface Structures ◽  
Texture Orientation ◽  
Subsurface Defects

In nanomaterials, the surface or the subsurface structures influence the friction behaviors greatly. In this work, nanoscale friction behaviors between a rigid cylinder tip and a single crystal copper substrate are studied by molecular dynamics simulation. Nanoscale textured surfaces are modeled on the surface of the substrate to represent the surface structures, and the spacings between textures are seen as defects on the surface. Nano-defects are prepared at the subsurface of the substrate. The effects of depth, orientation, width and shape of textured surfaces on the average friction forces are investigated, and the influence of subsurface defects in the substrate is also studied. Compared with the smooth surface, textured surfaces can improve friction behaviors effectively. The textured surfaces with a greater depth or smaller width lead to lower friction forces. The surface with 45° texture orientation produces the lowest average friction force among all the orientations. The influence of the shape is slight, and the v-shape shows a lower average friction force. Besides, the subsurface defects in the substrate make the sliding process unstable and the influence of subsurface defects on friction forces is sensitive to their positions.

Fundamental Measurements of the Friction on an Atomically-Flat Terrace of Au(100) in Sulfuric Acid Solution under Potential Control Using Electrochemical Atomic Force Microscope

2006 ◽  
Vol 512 ◽  
pp. 395-398
Author(s):  
Nobumitsu Hirai ◽  
Tatsuya Tooyama ◽  
Toshihiro Tanaka
Keyword(s):  
Aqueous Solution ◽  
Sulfuric Acid ◽  
Silicon Nitride ◽  
Acid Solution ◽  
Atomic Force Microscope ◽  
Friction Force ◽  
Potential Range ◽  
Potential Control ◽  
Atomic Force ◽  
Atomically Flat

Potential dependence of the friction force between an atomically-flat terrace of Au(100) single crystal and a tip attached to a silicon nitride cantilever of electrochemical atomic force microscope (EC-AFM) have been investigated qualitatively in 0.05 M H2SO4 aqueous solution. It is found that the friction force gains when the potential increases in the potential range between −400 mV and 400 mV vs Hg/Hg2SO4 electrode.

Electric Control of Friction on Silicon Studied by Atomic Force Microscope

NANO ◽  
2015 ◽  
Vol 10 (03) ◽  
pp. 1550038 ◽  
Author(s):  
Yan Jiang ◽  
Lili Yue ◽  
Boshen Yan ◽  
Xi Liu ◽  
Xiaofei Yang ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Adhesion Forces ◽  
Friction Forces ◽  
Type Silicon ◽  
Atomic Force ◽  
Electric Control ◽  
Before And After ◽  
Track Line

We investigated friction on an n-type silicon surface using an atomic force microscope when a bias voltage was applied to the sample. Friction forces on the same track line were measured before and after the bias voltages were applied and it was found that the friction forces in n-type silicon can be tuned reversibly with the bias voltage. The dependence of adhesion forces between the silicon nitride tip and Si sample on the bias voltages approximately follows a parabolic law due to electrostatic force, which results in a significant increase in the friction force at an applied electric field.

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