scholarly journals In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation

2000 ◽  
Vol 88 (4) ◽  
pp. 1742-1746 ◽  
Author(s):  
C. Cismaru ◽  
J. L. Shohet
Keyword(s):  
Thin Films ◽  
Ultraviolet Radiation ◽  
Vacuum Ultraviolet ◽  
Electrical Characterization ◽  
Dielectric Thin Films ◽  
Vacuum Ultraviolet Radiation

FT-IR, SIMS and electrical characterization of Si3N4 thin films obtained from CVD, assisted by in situ electrical discharge

1993 ◽  
Vol 24 (4) ◽  
pp. 389-393
Author(s):  
B. Balland ◽  
R. Botton ◽  
M. Lemiti ◽  
J.C. Bureau ◽  
A. Glachant
Keyword(s):  
Thin Films ◽  
Electrical Discharge ◽  
Electrical Characterization ◽  
Ft Ir

scholarly journals Electrical characterization of in situ polymerized polyaniline thin films

2007 ◽  
Vol 143 (1-3) ◽  
pp. 31-37 ◽  
Author(s):  
S.A. Travain ◽  
G.F. Leal Ferreira ◽  
J.A. Giacometti ◽  
R.F. Bianchi
Keyword(s):  
Thin Films ◽  
Electrical Characterization

scholarly journals In situ electrical characterization of YxTiy getter thin films during thermal activation

2019 ◽  
Vol 1319 ◽  
pp. 012012
Author(s):  
C Bessouet ◽  
S Lemettre ◽  
A Bosseboeuf ◽  
P Coste ◽  
Ch Renard ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Electrical Characterization

In Situ High Temperature Electrical Characterization of RF Sputtered SiCBN Thin Films

2007 ◽  
Vol 154 (10) ◽  
pp. H875 ◽  
Author(s):  
A. Vijayakumar ◽  
R. M. Todi ◽  
V. O. Todi ◽  
K. B. Sundaram
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrical Characterization

Electrical characterization of rf sputtered TiN thin films on III–V semiconductors

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1076-1081 ◽  
Author(s):  
Zhengda Pang ◽  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
John G. Simmons ◽  
...  
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Electrical Characterization ◽  
Optical Emission ◽  
Tin Thin Films ◽  
Optimized Conditions

TiN thin films were deposited on GaAs and InP by rf reactive sputtering. Samples of TiN/GaAs and TiN/InP then were investigated by a multitude of techniques to evaluate the morphology of as-deposited and post-annealed films and to investigate contact properties such as barrier height, carrier concentration, and ideality factor. Optical emission spectroscopy was used as an in situ process control to optimize certain film properties. The results show that the deposition conditions, such as total pressure, N2/Ar flow ratio, and substrate temperature, have an important effect on the properties of the resulting films. Under optimized conditions, near-stoichiometric TiN films with resistivities as low as 20 μΩ cm were obtained. Rapid thermal annealing (RTA) of TiN/GaAs enhanced the barrier height and improved the ideality factor of these diodes. These systems were stable after RTA at temperatures as high as 800 °C. As-deposited TiN on InP, in contrast, typically exhibits nonrectifying behaviour. The characteristics become more ohmic after RTA at elevated temperatures.

In-Situ Electrical Characterization of Low Temperature Getter Thin Films Activation

2018 ◽  
Vol 86 (16) ◽  
pp. 47-53
Author(s):  
Sylvain Lemettre ◽  
Clément Bessouet ◽  
Philippe Coste ◽  
Helene Lecoq ◽  
Thierry Sauvage ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Characterization
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