The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition

2000 ◽  
Vol 88 (4) ◽  
pp. 1867-1872 ◽  
Author(s):  
R. Kröger ◽  
M. Eizenberg ◽  
E. Rabkin ◽  
D. Cong ◽  
L. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Void Formation ◽  
Chemical Vapor ◽  
Copper Films

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Role of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface

2014 ◽  
Vol 136 (8) ◽  
pp. 3040-3047 ◽  
Author(s):  
Xiuyun Zhang ◽  
Lu Wang ◽  
John Xin ◽  
Boris I. Yakobson ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Surface ◽  
Chemical Vapor Deposition Growth

Optimisation of Microcrystaline Silicon Deposited by Expanding Thermal Plasma Chemical Vapor Deposition for Solar-Cell Application

2007 ◽  
Vol 989 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ir Absorption ◽  
Solar Cell Application ◽  
Ion Energy ◽  
Plasma Chemical Vapor Deposition ◽  
Absorption Measurements

AbstractThe causes for the porosity of the microcrystalline material deposited by the expanding thermal plasma (ETP) chemical vapor deposition (CVD) technique have been investigated through IR-absorption measurements. The role of impinging ions on the structure of the material is discussed in relation to the hydrogen bounding configuration (microcrystalline factor). The ion energy is controlled through external RF biasing. Correlation between biasing and reduction of porosity is presented. The influence of high deposition pressure is as well studied, related with changes in a-Si structure.

Diamond growth on thin Ti wafers via chemical vapor deposition

1995 ◽  
Vol 10 (11) ◽  
pp. 2685-2688 ◽  
Author(s):  
Qijin Chen ◽  
Zhangda Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Substrate ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Diamond Growth ◽  
X Ray ◽  
Hot Filament ◽  
Insight Into

Diamond film was synthesized on thin Ti wafers (as thin as 40 μm) via hot filament chemical vapor deposition (HFCVD). The hydrogen embrittlement of the titanium substrate and the formation of a thick TiC interlayer were suppressed. A very low pressure (133 Pa) was employed to achieve high-density rapid nucleation and thus to suppress the formation of TiC. Oxygen was added to source gases to lower the growth temperature and therefore to slow down the hydrogenation of the thin Ti substrate. The role of the very low pressure during nucleation is discussed, providing insight into the nucleation mechanism of diamond on a titanium substrate. The as-grown diamond films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and x-ray analysis.

Sign in / Sign up

Export Citation Format

Share Document