Time-resolved photoluminescence lifetime measurements of the Γ5 and Γ6 free excitons in ZnO

2000 ◽  
Vol 88 (4) ◽  
pp. 2152-2153 ◽  
Author(s):  
D. C. Reynolds ◽  
D. C. Look ◽  
B. Jogai ◽  
J. E. Hoelscher ◽  
R. E. Sherriff ◽  
...  
Keyword(s):  
Lifetime Measurements ◽  
Time Resolved ◽  
Photoluminescence Lifetime ◽  
Time Resolved Photoluminescence

scholarly journals Фотолюминесценция с временным разрешением наноструктур InGaAs различной квантовой размерности

2019 ◽  
Vol 53 (11) ◽  
pp. 1520
Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
М.В. Максимов ◽  
Д.А. Санников ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Photon ◽  
Photon Counting ◽  
Dimensional Structure ◽  
Time Resolved ◽  
Single Photon Counting ◽  
Gaas Substrates ◽  
Photoluminescence Lifetime ◽  
Time Resolved Photoluminescence

By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence lifetime.

Exploring the Potential of Time-Resolved Photoluminescence Spectroscopy for the Detection of Plastics

2020 ◽  
Vol 74 (9) ◽  
pp. 1161-1166
Author(s):  
Sebastian Gies ◽  
Eva-Marie Schömann ◽  
Julia Anna Prume ◽  
Martin Koch
Keyword(s):  
Raman Spectroscopy ◽  
Ir Spectroscopy ◽  
Terrestrial Ecosystems ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Plastic Materials ◽  
Photoluminescence Lifetime ◽  
Ft Ir ◽  
Time Resolved Photoluminescence ◽  
Ft Ir Spectroscopy

Accurate data on microplastic occurrence in aquatic and terrestrial ecosystems are a basic requirement for microplastic risk assessment and management. Existing analysis techniques like Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy imaging are still time-consuming and depend on laborious sample preparation. Therefore, we investigate the potential of time-resolved photoluminescence spectroscopy as an alternative technique to identify plastic materials, and, for the first time determine the photoluminescence lifetime of a series of polymers and several non-plastic samples typically found in a marine environment. The obtained photoluminescence lifetimes can be used to distinguish between plastic and natural materials. Furthermore, they allow us to identify distinct types of plastics. Therefore, the described approach has the potential to identify materials either as a stand-alone technique or for pre-characterization of sample materials for otherwise time-consuming analytical methods such as Raman spectroscopy or FT-IR spectroscopy.

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

2014 ◽  
Vol 778-780 ◽  
pp. 301-304 ◽  
Author(s):  
Birgit Kallinger ◽  
Mathias Rommel ◽  
Louise Lilja ◽  
Jawad ul Hassan ◽  
Ian D. Booker ◽  
...  
Keyword(s):  
Decay Time ◽  
Carrier Lifetime ◽  
Measurement Theory ◽  
Measurement Techniques ◽  
Extended Defects ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Substrate Quality ◽  
Photoconductivity Decay ◽  
Time Resolved Photoluminescence

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC wafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ with a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive for substrate quality and distribution of extended defects.

scholarly journals Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity

2019 ◽  
Vol 963 ◽  
pp. 313-317
Author(s):  
Jan Beyer ◽  
Nadine Schüler ◽  
Jürgen Erlekampf ◽  
Birgit Kallinger ◽  
Patrick Berwian ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Excess Carrier ◽  
Time Resolved Photoluminescence ◽  
Different Thickness

Temperature dependent microwave detected photoconductivity MDP and time-resolved photoluminescence TRPL were employed to investigate the carrier lifetime in CVD grown 4H-SiC epilayers of different thickness. The minority carrier lifetime may be found from both theMDP and defect PL decay at room temperature for all epilayers, whereas the near bandedge emission (NBE) decay is much faster for thin epilayers (<17 μm) due to the substrate proximity and only follows the minority carrier lifetime for thicker samples at lower excess carrier concentrations.

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