Characterization of strontium barium niobate optical thin film grown by pulsed laser deposition

1999 ◽  
Author(s):  
H. Liu ◽  
S. Li ◽  
F. E. Fernandez ◽  
W. Jia ◽  
G. Liu
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Optical Thin Film

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Microwave Properties of Strontium Barium Niobate Thin Films Grown by Pulsed Laser Deposition

2001 ◽  
Vol 688 ◽  
Author(s):  
Víctor Rodríguez-Santiago ◽  
Yelitza González ◽  
Félix E. Fernández ◽  
Carl H. Mueller ◽  
Fred W. Van Keuls ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
High Frequencies

AbstractStrontium barium niobate (SrxBa1−xNb2O6 - SBN) with 0.25≤x≤0.75 is a ferroelectric material of interest for diverse optoelectronic applications. Dielectric properties of bulk SBN crystals were comprehensively studied over 30 years ago for a range of compositions and at frequencies up to 30 MHz, but there is little information on properties at higher frequencies. In particular, and up to the best of our knowledge, there are no published results about SBN thin film dielectric properties at high frequencies. For the study reported here, SBN thin films with x = 0.61 were grown on MgO and LaAlO3 substrates by Pulsed Laser Deposition (PLD). Films with good crystallinity and oriented with c-axis normal to the substrate surface were obtained on both types of substrates, while films on MgO had much better texture due to better lattice matching. Interdigital electrode (IDE) capacitors and coupled microstrip phase shifters (CMPS) were fabricated with both types of samples in order to study dielectric response. Capacitance of the IDE capacitors was measured at 1 MHz as a function of temperature and bias voltage, revealing very low losses but poor capacitance tunability, particularly for samples on MgO. Response of the CMPS structures was measured at room temperature and at high frequencies, up to 21 GHz. Insertion losses were measured up to 28 GHz.

Structure, Morphology, and Properties of Strontium Barium Niobate Thin Films Grown by Pulsed Laser Deposition

2002 ◽  
Vol 42 (1) ◽  
pp. 219-233 ◽  
Author(s):  
Félix E. Fernández ◽  
Yelitza González ◽  
Huimin Liu ◽  
Antonio Martínez ◽  
Vićtor Rodríguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Structure Morphology

Preparation and Characterization of BiFeO3 Thin Film Deposited on ITO Substrate by Using Pulsed Laser Deposition

2011 ◽  
Vol 59 (3(1)) ◽  
pp. 2537-2541 ◽  
Author(s):  
Jungmin Park ◽  
Fumiya Gotoda ◽  
Seiji Nakashima ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bifeo3 Thin Film

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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