Structure, Morphology, and Properties of Strontium Barium Niobate Thin Films Grown by Pulsed Laser Deposition

2002 ◽  
Vol 42 (1) ◽  
pp. 219-233 ◽  
Author(s):  
Félix E. Fernández ◽  
Yelitza González ◽  
Huimin Liu ◽  
Antonio Martínez ◽  
Vićtor Rodríguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Structure Morphology

Microwave Properties of Strontium Barium Niobate Thin Films Grown by Pulsed Laser Deposition

2001 ◽  
Vol 688 ◽  
Author(s):  
Víctor Rodríguez-Santiago ◽  
Yelitza González ◽  
Félix E. Fernández ◽  
Carl H. Mueller ◽  
Fred W. Van Keuls ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
High Frequencies

AbstractStrontium barium niobate (SrxBa1−xNb2O6 - SBN) with 0.25≤x≤0.75 is a ferroelectric material of interest for diverse optoelectronic applications. Dielectric properties of bulk SBN crystals were comprehensively studied over 30 years ago for a range of compositions and at frequencies up to 30 MHz, but there is little information on properties at higher frequencies. In particular, and up to the best of our knowledge, there are no published results about SBN thin film dielectric properties at high frequencies. For the study reported here, SBN thin films with x = 0.61 were grown on MgO and LaAlO3 substrates by Pulsed Laser Deposition (PLD). Films with good crystallinity and oriented with c-axis normal to the substrate surface were obtained on both types of substrates, while films on MgO had much better texture due to better lattice matching. Interdigital electrode (IDE) capacitors and coupled microstrip phase shifters (CMPS) were fabricated with both types of samples in order to study dielectric response. Capacitance of the IDE capacitors was measured at 1 MHz as a function of temperature and bias voltage, revealing very low losses but poor capacitance tunability, particularly for samples on MgO. Response of the CMPS structures was measured at room temperature and at high frequencies, up to 21 GHz. Insertion losses were measured up to 28 GHz.

Growth of epitaxial strontium barium niobate thin films by pulsed laser deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 2018-2020 ◽  
Author(s):  
S. Schwyn Thöny ◽  
K. E. Youden ◽  
J. S. Harris ◽  
L. Hesselink
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium

Crystalline properties of strontium barium niobate thin films produced by pulsed-laser deposition

1999 ◽  
Vol 79 (11) ◽  
pp. 2869-2876 ◽  
Author(s):  
Jianguo Zhu ◽  
Sushil Kumar Singh ◽  
Pam A. Thomas ◽  
Stuart B. Palmer
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Strontium Barium Niobate ◽  
Strontium Barium

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

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