Erratum: “Negative-effective-mass ballistic field-effect transistor: Theory and modeling” [J. Appl. Phys. 87, 7466 (2000)]

Z. S. Gribnikov; N. Z. Vagidov; A. N. Korshak; V. V. Mitin

doi:10.1063/1.1287735

Erratum: “Negative-effective-mass ballistic field-effect transistor: Theory and modeling” [J. Appl. Phys. 87, 7466 (2000)]

Journal of Applied Physics ◽

10.1063/1.1287735 ◽

2000 ◽

Vol 88 (5) ◽

pp. 3105-3105

Author(s):

Z. S. Gribnikov ◽

N. Z. Vagidov ◽

A. N. Korshak ◽

V. V. Mitin

Keyword(s):

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Negative Effective Mass ◽

Effect Transistor ◽

Theory And Modeling

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Negative-effective-mass ballistic field-effect transistor: Theory and modeling

Journal of Applied Physics ◽

10.1063/1.373011 ◽

2000 ◽

Vol 87 (10) ◽

pp. 7466-7475 ◽

Cited By ~ 12

Author(s):

Z. S. Gribnikov ◽

N. Z. Vagidov ◽

A. N. Korshak ◽

V. V. Mitin

Keyword(s):

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Negative Effective Mass ◽

Effect Transistor ◽

Theory And Modeling

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Ballistic field-effect transistor with negative-effective-mass current carriers in the channel

Superlattices and Microstructures ◽

10.1006/spmi.1999.0808 ◽

2000 ◽

Vol 27 (2-3) ◽

pp. 105-109

Author(s):

Z. Gribnikov ◽

N. Vagidov ◽

A. Korshak ◽

V. Mitin

Keyword(s):

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Negative Effective Mass ◽

Effect Transistor

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Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1−xAs quantum well and InAs–GaAs superlattice channels

Superlattices and Microstructures ◽

10.1006/spmi.1996.0366 ◽

1998 ◽

Vol 23 (5) ◽

pp. 1019-1025 ◽

Cited By ~ 3

Author(s):

L.A. Cury ◽

F.M. Matinaga ◽

S.L.S. Freire ◽

M.V.B. Moreira ◽

J. Beerens ◽

...

Keyword(s):

Quantum Well ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Mass Determination ◽

Electron Effective Mass ◽

Asymmetric Modulation ◽

Effect Transistor

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Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.12.019 ◽

2018 ◽

Vol 113 ◽

pp. 769-776 ◽

Cited By ~ 4

Author(s):

Amir Hossein Bayani ◽

Jan Voves ◽

Daryoosh Dideban

Keyword(s):

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Effective Mass Approximation ◽

Atomistic Model ◽

Mass Approximation ◽

Effect Transistor ◽

Output Characteristics

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Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2018.8354755 ◽

2018 ◽

Author(s):

J.L. Padilla ◽

C. Medina-Bailon ◽

M. Rupakula ◽

C. Alper ◽

C. Sampedro ◽

...

Keyword(s):

Effective Mass ◽

Field Effect ◽

Field Effect Transistor ◽

Mass Variation ◽

Electron Hole ◽

Electron Effective Mass ◽

Effect Transistor

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

IEICE Transactions on Electronics ◽

10.1587/transele.e93.c.540 ◽

2010 ◽

Vol E93-C (5) ◽

pp. 540-545 ◽

Cited By ~ 10

Author(s):

Dong Seup LEE ◽

Hong-Seon YANG ◽

Kwon-Chil KANG ◽

Joung-Eob LEE ◽

Jung Han LEE ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

IEICE Transactions on Electronics ◽

10.1587/transele.e97.c.677 ◽

2014 ◽

Vol E97.C (7) ◽

pp. 677-682

Author(s):

Sung YUN WOO ◽

Young JUN YOON ◽

Jae HWA SEO ◽

Gwan MIN YOO ◽

Seongjae CHO ◽

...

Keyword(s):

Silicon Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2019-24-4-407-414 ◽

2019 ◽

Vol 24 (4) ◽

pp. 407-414

Author(s):

Oksana V. Gubanova ◽

◽

Evgeniy V. Kuznetsov ◽

Elena N. Rybachek ◽

Alexander N. Saurov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates

i-manager’s Journal on Electronics Engineering ◽

10.26634/jele.1.4.1512 ◽

2011 ◽

Vol 1 (4) ◽

pp. 56-60

Author(s):

V. Saravanan ◽

V. Kannan

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Gates ◽

Effect Transistor

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