Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1−xAs quantum well and InAs–GaAs superlattice channels

1998 ◽  
Vol 23 (5) ◽  
pp. 1019-1025 ◽  
Author(s):  
L.A. Cury ◽  
F.M. Matinaga ◽  
S.L.S. Freire ◽  
M.V.B. Moreira ◽  
J. Beerens ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Mass Determination ◽  
Electron Effective Mass ◽  
Asymmetric Modulation ◽  
Effect Transistor

Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

2016 ◽  
Vol 163 ◽  
pp. 115-118
Author(s):  
Jiao Wen ◽  
Qiang Liu ◽  
Chang Liu ◽  
Yize Wang ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Sensitivity ◽  
Effect Transistor

Negative-effective-mass ballistic field-effect transistor: Theory and modeling

2000 ◽  
Vol 87 (10) ◽  
pp. 7466-7475 ◽  
Author(s):  
Z. S. Gribnikov ◽  
N. Z. Vagidov ◽  
A. N. Korshak ◽  
V. V. Mitin
Keyword(s):  
Effective Mass ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Effective Mass ◽  
Effect Transistor ◽  
Theory And Modeling

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

2003 ◽  
Vol 94 (5) ◽  
pp. 3556-3562 ◽  
Author(s):  
V. V. Popov ◽  
O. V. Polischuk ◽  
T. V. Teperik ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor ◽  
Plasmon Modes
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